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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 11/2017

19-03-2017

Facile synthesis of Cu2SnS3 thin films grown by SILAR method: effect of film thickness

Authors: Harshad D. Shelke, Abhishek C. Lokhande, Vanita S. Raut, Amar M. Patil, Jin H. Kim, Chandrakant D. Lokhande

Published in: Journal of Materials Science: Materials in Electronics | Issue 11/2017

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Abstract

Ternary Cu–Sn–S system, Cu2SnS3 (CTS) thin films have been successfully deposited via successive ionic layer adsorption and reaction (SILAR) method. The effect of film thickness on the structural, morphological, wettability and optical properties of CTS material is studied. The XRD studies confirm formation of triclinic (mohite) phase of CTS material. The SEM images show that entire film surface is covered by compact nearly spherical grains over growth of spongy clusters. The Brunauer-Emmett-Teller (BET) analysis revealed that the surface area of CTS material is 2.11 m2 g−1. The wettability study indicates hydrophilic nature of CTS samples. The optical band gap is decreased from 1.36 to 0.98 eV with increase in film thickness. The photoelectrochemical (PEC) study of CTS material shows anodic photocurrent indicating P-type electrical conductivity.
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Metadata
Title
Facile synthesis of Cu2SnS3 thin films grown by SILAR method: effect of film thickness
Authors
Harshad D. Shelke
Abhishek C. Lokhande
Vanita S. Raut
Amar M. Patil
Jin H. Kim
Chandrakant D. Lokhande
Publication date
19-03-2017
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 11/2017
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-6492-7

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