Top

Journal of Materials Science: Materials in Electronics

Published in:

23-11-2019

Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition

Authors: Hao Wang, Sannian Song, Zhitang Song, Zhiguo Zhou, Dongning Yao, Shilong Lv

Published in: Journal of Materials Science: Materials in Electronics | Issue 8/2020

Activate our intelligent search to find suitable subject content or patents.

search-config

AI-assisted search

Off

Abstract

Current features of phase change memory (PCM) based on Ge₂Sb₂Te₅ (GST) as a non-volatile memory is insufficient to meet the needs of storage class memory (SCM) such as extremely high-density, ultra-fast operating speed and long life cycle. In this study, Ti_0.28Sb₂Te₃ (TST) device was fabricated based on atomic layer deposition (ALD) method and used as a phase change material. Due to the fast crystallization and low melting temperature of TST, the set speed can be reduced to 6 ns while the reset voltage can be decreased by 20% compared with GST-based device with the same cell structure. In addition, the ALD-deposited TST alloy showed a good gap-fill capability. These results indicate that the ALD-deposited TST film is a fast and scalable phase-change material applied to SCM.

previous article NO2 gas sensing properties of Pd/WO3 films prepared by glancing angle deposition

next article Effect of pulsed UV laser irradiation on 4H-SiC MOS with thermal gate oxide

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 340 Zeitschriften

aus folgenden Fachgebieten:

Bauwesen + Immobilien
Business IT + Informatik
Finance + Banking
Management + Führung
Marketing + Vertrieb
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

R.F. Freitas, W.W. Wilcke, IBM J. Res. Dev. 52, 439 (2008). https://doi.org/10.1147/rd.524.0439 CrossRef

A.L. Lacaita, A. Redaelli, Microelectron. Eng. 109, 351 (2013). https://doi.org/10.1016/j.mee.2013.02.105 CrossRef

H.-Y. Cheng, S. Raoux, J.L. Jordan-Sweet, J. Appl. Phys. 115, 093101 (2014). https://doi.org/10.1063/1.4867045 CrossRef

A. Bivens, P. Dube, M. Franceschini, J. Karidis, L. Lastras, M. Tsao, in 2010 IEEE International Memory Workshop (2010)

D. Loke, L. Shi, W. Wang et al., Nanotechnology 22, 254019 (2011). https://doi.org/10.1088/0957-4484/22/25/254019 CrossRef

I. Friedrich, V. Weidenhof, W. Njoroge, P. Franz, M. Wuttig, J. Appl. Phys. 87, 4130 (2000). https://doi.org/10.1063/1.373041 CrossRef

H.P. Wong, S. Raoux, S. Kim et al., Proc. IEEE 98, 2201 (2010). https://doi.org/10.1109/JPROC.2010.2070050 CrossRef

M. Zhu, L. Wu, F. Rao et al., Appl. Phys. Lett. 104, 053119 (2014). https://doi.org/10.1063/1.4863430 CrossRef

M. Xia, M. Zhu, Y. Wang et al., ACS Appl. Mater. Interfaces 7, 7627 (2015). https://doi.org/10.1021/acsami.5b00083 CrossRef

10.

M. Zhu, L. Wu, Z. Song et al., Appl. Phys. Lett. 100, 122101 (2012). https://doi.org/10.1063/1.3695036 CrossRef

11.

M. Zhu, M. Xia, F. Rao et al., Nat. Commun. 5, 4086 (2014). https://doi.org/10.1038/ncomms5086 CrossRef

12.

B.J. Choi, S. Choi, Y.C. Shin et al., J. Electrochem. Soc. 154, H318 (2007). https://doi.org/10.1149/1.2456199 CrossRef

13.

D.H. Im, J.I. Lee, S.L. Cho et al., in 2008 IEEE International Electron Devices Meeting (2008)

14.

J.I. Lee, H. Park, S.L. Cho et al., in 2007 IEEE Symposium on VLSI Technology (2007)

15.

F. Yeung, S.-J. Ahn, Y.-N. Hwang et al., Jpn. J. Appl. Phys. 44, 2691 (2005). https://doi.org/10.1143/jjap.44.2691 CrossRef

16.

R.-Y. Kim, H.-G. Kim, S.-G. Yoon, Appl. Phys. Lett. 89, 102107 (2006). https://doi.org/10.1063/1.2338586 CrossRef

17.

B.J. Choi, S. Choi, T. Eom et al., Chem. Mater. 21, 2386 (2009). https://doi.org/10.1021/cm803369b CrossRef

18.

A. Abrutis, V. Plausinaitiene, M. Skapas et al., Chem. Mater. 20, 3557 (2008). https://doi.org/10.1021/cm8004584 CrossRef

19.

J. Lee, S. Choi, C. Lee, Y. Kang, D. Kim, Appl. Surf. Sci. 253, 3969 (2007). https://doi.org/10.1016/j.apsusc.2006.08.044 CrossRef

20.

J.-F. Zheng, P. Chen, W. Hunks et al., MRS Proc. 1160, 1160 (2011). https://doi.org/10.1557/PROC-1160-H14-11 CrossRef

21.

V. Pore, T. Hatanpää, M. Ritala, M. Leskelä, J. Am. Chem. Soc. 131, 3478 (2009). https://doi.org/10.1021/ja8090388 CrossRef

22.

M. Ritala, V. Pore, T. Hatanpää et al., Microelectron. Eng. 86, 1946 (2009). https://doi.org/10.1016/j.mee.2009.03.014 CrossRef

23.

T. Suntola, Mater. Sci. Rep. 4, 261 (1989). https://doi.org/10.1016/S0920-2307(89)80006-4 CrossRef

24.

S. Song, D. Yao, Z. Song et al., Nanoscale Res. Lett. 10, 89 (2015). https://doi.org/10.1186/s11671-015-0815-5 CrossRef

25.

J. Feng, Y. Zhang, B.W. Qiao et al., Appl. Phys. A 87, 57 (2007). https://doi.org/10.1007/s00339-006-3851-2 CrossRef

26.

F. Rao, Z. Song, Y. Gong et al., Appl. Phys. Lett. 92, 223507 (2008). https://doi.org/10.1063/1.2939218 CrossRef

27.

I.S. Kim, S.L. Cho, D.H. Im et al., in 2010 Symposium on VLSI Technology (2010)

Title: Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition
Authors: Hao Wang
Sannian Song
Zhitang Song
Zhiguo Zhou
Dongning Yao
Shilong Lv
Publication date: 23-11-2019
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 8/2020
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-019-02605-1

Springer Professional

Abstract

Please log in to get access to your license.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Springer Professional "Technik"

Springer Professional "Wirtschaft"

Other articles of this Issue 8/2020

The effect of thickness on texture of Ge2Sb2Te5 phase-change films

Eu3+ and Dy3+-activated LaAlO3 phosphor for solid-state lighting

Ti doping enhanced alumina dielectrics for low-voltage thin-film transistors via low-temperature lightwave irradiation

The reliability assessment of Au–Al bonds using parallel gap resistance microwelding

Applicability of Fe-CNC/GR/PLA composite as potential sensor for biomolecules

CNT/Cu2O heterojunction via self-assembly technology for emerging flexible photodetectors