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Journal of Electronic Materials
Published in: Journal of Electronic Materials 10/2023

22-07-2023 | Original Research Article

Fe-Doped Di-Bismuth Tetra-Oxide Thin Films: Synthesis, Characterization, and Application

Authors: Madia Sahar, Zohra Nazir Kayani, Maryam Anwar, Amna Hassan, Saira Riaz, Shahzad Naseem

Published in: Journal of Electronic Materials | Issue 10/2023

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Abstract

In this research work, undoped and Fe-doped Bi2O4 thin films were synthesized by sol-gel dip coating technique. The x-ray diffraction results confirmed the formation of the monoclinic phase of Bi2O4 with no other impurity peak. Fourier transform infrared spectroscopy confirmed functional bonds of bismuth oxide in the range of ~ 450–650 cm−1. Bandgaps of undoped and Fe-doped Bi2O4 films were found in the range of 2.0–1.80 eV, which was an important range for the Fe:Bi2O4 films to be used as window layers in solar cells. Fe-doped Bi2O4 may be employed in spintronics technology because all thin films exhibited ferromagnetic behavior. The dielectric properties of bismuth oxide were enhanced with an increase in Fe dopant percentage. The results of antibacterial activity demonstrated that Fe-doped Bi2O4 was an effective bacteriostatic agent to control the spread and infection caused by these bacterial strains. Compared to undoped Bi2O4, 5 wt.% of iron-doped Bi2O4 showed the highest photocatalytic performance.
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Metadata
Title
Fe-Doped Di-Bismuth Tetra-Oxide Thin Films: Synthesis, Characterization, and Application
Authors
Madia Sahar
Zohra Nazir Kayani
Maryam Anwar
Amna Hassan
Saira Riaz
Shahzad Naseem
Publication date
22-07-2023
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 10/2023
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-023-10591-8

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