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Semiconductors
Published in: Semiconductors 7/2020

01-07-2020 | SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA

Formation of GaN Nanorods in Monodisperse Spherical Mesoporous Silica Particles

Authors: E. Yu. Stovpiaga, D. A. Kurdyukov, D. A. Kirilenko, V. G. Golubev

Published in: Semiconductors | Issue 7/2020

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Abstract

Gallium-nitride nanorods with a diameter of 15–40 nm and length of 50–150 nm are synthesized in monodisperse spherical mesoporous silica particles (MSMSPs) by high-temperature annealing of the Ga2O3 precursor in ammonia. The template material (a-SiO2) is selectively removed by etching the composite MSMSP/GaN particles with HF to give individual GaN nanorods. It is shown that the size of the GaN nanorods substantially exceeds the pore size of the MSMSPs (diameter ~3 nm, length ~10 nm). A possible mechanism by which GaN nanorods are formed is proposed. Redistribution of the material within the composite MSMSP/GaN particles possibly occurs via the surface diffusion of gaseous molecules within mesopores and via the diffusion of Ga and N atoms in a-SiO2.
previous article 2D SiC/Si Structure: Electron States and Adsorbability
next article Doping-Dependent Nonlinear Electron Mobility in GaAs|InxGa1 –xAs Coupled Quantum-Well Pseudo-Morphic MODFET Structure

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Metadata
Title
Formation of GaN Nanorods in Monodisperse Spherical Mesoporous Silica Particles
Authors
E. Yu. Stovpiaga
D. A. Kurdyukov
D. A. Kirilenko
V. G. Golubev
Publication date
01-07-2020
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 7/2020
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S106378262007012X

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