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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 9/2021

24-04-2021

Forming-free and multilevel resistive switching properties of hydrothermally synthesized hexagonal molybdenum oxide microrods

Authors: Swapnil R. Patil, Navaj B. Mullani, Bhagyashri B. Kamble, Shivaji N. Tayade, Rajanish K. Kamat, Tae Joo Park, Deok-kee Kim, Tukaram D. Dongale

Published in: Journal of Materials Science: Materials in Electronics | Issue 9/2021

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Abstract

In recent years, resistive switching memory devices are attracted much attention for high-density non-volatile memory applications owing to their cell scalability, multilevel operations, and 3D capability in crossbar memory arrays. In this work, we report the forming-free and multilevel resistive switching properties of hydrothermally synthesized hexagonal molybdenum oxide (h-MoO3) microrods. The formation of h-MoO3 microrods was confirmed by using the X-ray diffraction technique and scanning electron microscopy. Different chemical properties of h-MoO3 microrods were determined by energy-dispersive X-ray, photoluminescence, Raman, and X-ray photoelectron spectroscopic techniques. The memory device was fabricated in a Ti/MoO3/FTO structure and its bipolar resistive switching properties were investigated. The memory device shows voltage-dependent tunable I-V properties and shows electroforming-free operation. Moreover, we have calculated the different memristive properties and showed that the device possesses double-valued charge-magnetic flux characteristics, suggesting the dominance of memristive properties in the Ti/MoO3/FTO device. We further explored the multilevel resistive switching property of the device by varying the RESET voltage. The Ti/MoO3/FTO memristive device can able to show four distinct resistive states during endurance and retention tests. The statistical analysis suggested that the device has less variation during the cycle-to-cycle operation. The device conduction mechanism was obtained by fitting different charge transport models, and a possible resistive switching mechanism is presented based on the observed multilevel resistive switching effect of the Ti/MoO3/FTO memristive device.
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Metadata
Title
Forming-free and multilevel resistive switching properties of hydrothermally synthesized hexagonal molybdenum oxide microrods
Authors
Swapnil R. Patil
Navaj B. Mullani
Bhagyashri B. Kamble
Shivaji N. Tayade
Rajanish K. Kamat
Tae Joo Park
Deok-kee Kim
Tukaram D. Dongale
Publication date
24-04-2021
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 9/2021
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-021-05883-w

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