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IEEE 754 Floating Point Pipelined Multiplier with Karatsuba for Mitigations of Area and Power Read chapter Read first chapter

2021 | OriginalPaper | Chapter

Gate Leakage Current Assessment of AlGaN/GaN HEMT with AlN Cap Layer

Authors : Shreyasi Das, Vandana Kumari, Mridula Gupta, Manoj Saxena

Published in: Computers and Devices for Communication

Publisher: Springer Singapore

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Abstract

In this work, TCAD-based investigation has been performed to explore the influence of AlN cap layer on the reliability of AlGaN/GaN HEMT. Effect of cap layer thickness (AlN) and gate length on gate leakage current, drain current and off-current (Ioff) has also been demonstrated in this study. Using AlN cap layer, higher drain current has been achieved with significantly lower gate leakage current. However, almost same off-state current is achieved by using AlN material instead of GaN-based cap layer. With the enhancement in drain voltage, significant enhancement in gate leakage current is observed which is significantly higher in the device having GaN cap layer. Also, the improvement in gate leakage current with positive gate bias is significantly higher than the negative gate bias.

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Metadata
Title
Gate Leakage Current Assessment of AlGaN/GaN HEMT with AlN Cap Layer
Authors
Shreyasi Das
Vandana Kumari
Mridula Gupta
Manoj Saxena
Copyright Year
2021
Publisher
Springer Singapore
Book
Computers and Devices for Communication

Print ISBN: 978-981-15-8365-0

Electronic ISBN: 978-981-15-8366-7

Copyright Year: 2021

DOI
https://doi.org/10.1007/978-981-15-8366-7_68