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IEEE 754 Floating Point Pipelined Multiplier with Karatsuba for Mitigations of Area and Power Read chapter Read first chapter

2021 | OriginalPaper | Chapter

An Asymmetric π - Gate MOSHEMT Architecture for High Frequency Applications

Authors : Khushwant Sehra, Vandana Kumari, Mridula Gupta, Meena Mishra, D. S. Rawal, Manoj Saxena

Published in: Computers and Devices for Communication

Publisher: Springer Singapore

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Abstract

This paper evaluates the RF performance of an Asymmetric π - Gate MOSHEMT and HEMT architecture for high frequency applications through extensive TCAD simulations. To ensure that the simulation results conform with the actual device, simulation results have been calibrated with respect to experimental data. The calibrated device then acts as a primer for realizing the π - Gate HEMT and its Asymmetric MOSHEMT architecture. The performance has been investigated by introducing MOSHEMT architecture under both legs of the π - structure. Comparisons demonstrate an improvement in terms of current gain cut - off frequency by 20% (under right leg) — 25% (under left leg) when compared with the original π - Gate HEMT.

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previous chapter Study of High-Frequency Performance in GeSn-Based QWIP
next chapter Gate Leakage Current Assessment of AlGaN/GaN HEMT with AlN Cap Layer
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Metadata
Title
An Asymmetric π - Gate MOSHEMT Architecture for High Frequency Applications
Authors
Khushwant Sehra
Vandana Kumari
Mridula Gupta
Meena Mishra
D. S. Rawal
Manoj Saxena
Copyright Year
2021
Publisher
Springer Singapore
Book
Computers and Devices for Communication

Print ISBN: 978-981-15-8365-0

Electronic ISBN: 978-981-15-8366-7

Copyright Year: 2021

DOI
https://doi.org/10.1007/978-981-15-8366-7_67