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2011 | OriginalPaper | Chapter

4. Gate Level Modeling and Simulation

Authors : Nadine Buard, Lorena Anghel

Published in: Soft Errors in Modern Electronic Systems

Publisher: Springer US

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Abstract

This chapter presents an overview of a methodology for analyzing the behavior of combinational and sequential cells regarding “Single-Event Multiple-Transients” (SEMT) caused by nuclear reactions induced by atmospheric neutrons. The methodology uses a combination of Monte Carlo-based selection of nuclear reactions, simulation of the carriers transport in the device, and SPICE simulation. The effects of nuclear particles on the gates are monitored at the gate output by means of transient duration, amplitude, and associated occurrence probability.

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previous chapter JEDEC Standards on Measurement and Reporting of Alpha Particle and Terrestrial Cosmic Ray Induced Soft Errors

next chapter Circuit and System Level Single-Event Effects Modeling and Simulation

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Title: Gate Level Modeling and Simulation
Authors: Nadine Buard
Lorena Anghel
Publisher: Springer US
Book: Soft Errors in Modern Electronic Systems
Print ISBN: 978-1-4419-6992-7

Electronic ISBN: 978-1-4419-6993-4

Copyright Year: 2011
DOI: https://doi.org/10.1007/978-1-4419-6993-4_4