Skip to main content
Top

1997 | OriginalPaper | Chapter

Higher order asymptotic boundary conditions for an oxide region in a semiconductor device

Author : Irene M. Gamba

Published in: Wavelet Theory and Harmonic Analysis in Applied Sciences

Publisher: Birkhäuser Boston

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

When modeling steady potential flow problems in polygonal non-convex domains, it is expected to find singularities being develop at the corners. The asymptotic behavior of these singularities in reentering corners depends on the boundary data, on the corner angle and on the permittivity constants associated with the potential equation when modeling inhomogeneous media.

Metadata
Title
Higher order asymptotic boundary conditions for an oxide region in a semiconductor device
Author
Irene M. Gamba
Copyright Year
1997
Publisher
Birkhäuser Boston
DOI
https://doi.org/10.1007/978-1-4612-2010-7_12

Premium Partner