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2023 | OriginalPaper | Chapter

Impact of Tapered Dielectric on a Gallium Nitride Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) Towards Biosensing Applications

Authors : Ananya Dastidar, Tapas Kumar Patra

Published in: Micro and Nanoelectronics Devices, Circuits and Systems

Publisher: Springer Nature Singapore

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Abstract

This paper presents the sensitivity analysis of an AlGaN/GaN single gate MOSHEMT with a tapered high-κ dielectric with a cavity under the gate for neutral biomolecules. The device performance exhibits an enhanced g_m and reduced leakage current by using a tapered dielectric on a single gate MOSHEMT over a conventional dielectric single gate MOSHEMT. Variation in drain current, transconductance, and threshold voltage plays an important role when heterostructures are used for biosensing applications. This has been exploited in studying device sensitivity toward neutral biomolecules by using dielectric modulation. The simulated reference MOSHEMT with a tapered dielectric exhibited a maximum drain current of 1474 mA/mm and a high transconductance of 814.6 mA/mm while the MOSHEMT with a conventional dielectric exhibited a maximum drain current of 651.4 mA/mm and maximum transconductance of 771.6 mS/mm. With neutral biomolecule in the cavity, the maximum variation in drain current, transconductance, and threshold voltage was obtained for glucose oxidase as 310 mA/mm, 0.06 V, and 73.7 mS/mm, respectively. All simulations have been carried out using the 2D simulator Visual Technology Computer-Aided Design tool.

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Title: Impact of Tapered Dielectric on a Gallium Nitride Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) Towards Biosensing Applications
Authors: Ananya Dastidar
Tapas Kumar Patra
Publisher: Springer Nature Singapore
Book: Micro and Nanoelectronics Devices, Circuits and Systems
Print ISBN: 978-981-19-2307-4

Electronic ISBN: 978-981-19-2308-1

Copyright Year: 2023
DOI: https://doi.org/10.1007/978-981-19-2308-1_19