Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Topic Page
Marketing
Start single access now
Access for companies
EXTENDED SEARCH
Log in
Top
Published in:
IEEE 754 Floating Point Pipelined Multiplier with Karatsuba for Mitigations of Area and Power Read chapter Read first chapter

2021 | OriginalPaper | Chapter

Impact of Trap Charges and High Temperature on Reliability of GaAs/Al2O3-Based Junctionless FinFET

Authors : Neha Garg, Yogesh Pratap, Mridula Gupta, Sneha Kabra

Published in: Computers and Devices for Communication

Publisher: Springer Singapore

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

In the present work, the reliability issues of GaAs/Al2O3 Junctionless FinFET have been investigated by considering interface trap charges at semiconductor/oxide interface. RF/Analog performance of GaAs/Al2O3 Junctionless FinFET has been studied by evaluating different figures of merit such as drain current, Ion/Ioff ratio, transconductance, output conductance, capacitance (gate to source) and cut-off frequency. To analyze the effect of temperature on trap charges, the simulation study has been done at 300, 400 and 500 K temperature. In addition to this, a comparative analysis between GaAs/Al2O3 and Si/SiO2 Junctionless FinFET has also been carried out using a 3D device simulator (ATLAS). The results express that GaAs/Al2O3 Junctionless FinFET shows better performance in terms of the Ion/Ioff ratio and gives better immunity to trap charges as compared to Si/SiO2 Junctionless FinFET.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

inform now
previous chapter Performance and Circuit Analysis of Independent Gate FinFET
next chapter Power Analysis and Optimization Using Nonlinear Modeling of Memristor: A Design Case Study
Literature
1.
Sarvari, H., Ghayour, A.H., Chen, Z., Ghayour, R.: Analyses of short channel effects of single-gate and double-gate graphene nanoribbon field effect transistors. J. Mater. 16, 8 (2016). Article ID 8242469
2.
Kaundal, S., Rana, A.K.: Design and structural optimization of junctionless FinFET with Gaussian-doped channel. J. Comput. Electron. 17(2), 637–645 (2018)CrossRef
3.
Singh, J., Ciavatti, J., Sundaram, K., Wong, J.S., Bandyopadhyay, A., Zhang, X., Li, S., Bellaouar, A., Watts, J., Lee, J.G., Samavedam, S.B.: 14-nm FinFET technology for analog and RF applications. IEEE Trans. Electron Devices 65(1) (2018)
4.
Colinge Colinge, J.-P., Lee, C.-W., Afzalian, A., Akhavan, N.D., Yan, R., Ferain, I., Razavi, P., O’Neill, B., Blake, A., White, M., Kelleher, A.-M., McCarthy, B., Murphy, R.: Nanowire transistors without junctions. Nat. Nanotechnol. 5, 225–229 (2010)
5.
Wang, Y., Tang, Y., Sun, L., Cao, F.: High performance of junctionless MOSFET with asymmetric gate. Proc. Comput. Sci. 125, 825–831 (2018)CrossRef
6.
Garg, N., Pratap, Y., Gupta, M., Kabra, S.: Impact of different localized trap charge profiles on the short channel double gate junctionless nanowire transistor based inverter and ring oscillator circuit. AEUE Int. J. Electron Commun. 108, 251–261 (2019)CrossRef
7.
Yu, L.C., Dunne, G.T., Matocha, K.S., Cheung, K.P., Suehle, J.S., Sheng, K.: Reliability issues of SiC MOSFETs: a technology for high-temperature environments, IEEE Trans. Dev. Mater. Reliabil. 10(4) (2010)
8.
Garg, N., Pratap, Y., Gupta, M., Kabra, S.: Analysis of interface trap charges of double gate junctionless nanowire transistor (DG-JNT) for digital circuit applications. In: IEEE Electron Device Kolkata Conference. IEEE EDKCON (2018)
9.
Singh, J., Ciavatti, J., Sundaram, K., Wong, J.S., Bandyopadhyay, A., Zhang, X., Li, S., Bellaouar, A., Watts, J., Lee, J.G., Samavedam, S.B.: 14-nm FinFET technology for analog and RF applications. IEEE Trans. Electron Dev. 65(1), 31–37 (2018)CrossRef
10.
11.
Nagy, D., Indalecio, G., García-Loureiro, A.J., Elmessary, M.A., Kalna, K., Seoane, N.: FinFET versus gate-all-around nanowire FET: performance, scaling, and variability. IEEE J. Electron Dev. Soc. 6, 332–340 (2018)CrossRef
12.
Kumar, A., Chhabra, A., Chaujar, R.: GaAs junctionless FinFET using high-dielectric for high-performance applications. In: 2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO)
13.
14.
ATLAS Device Simulation Software. Silvaco Int., Santa Clara, CA, USA (2018)
15.
Mohapatra, S.K., Pradhan, K.P., Sahu, P.K., Kumar, M.R.: The performance measure of GS-DG MOSFET: an impact of metal gate work function. Adv. Natl. Sci. Nanosci. Nanotechnol. 5(2), 025002 (2014)CrossRef
Metadata
Title
Impact of Trap Charges and High Temperature on Reliability of GaAs/Al2O3-Based Junctionless FinFET
Authors
Neha Garg
Yogesh Pratap
Mridula Gupta
Sneha Kabra
Copyright Year
2021
Publisher
Springer Singapore
Book
Computers and Devices for Communication

Print ISBN: 978-981-15-8365-0

Electronic ISBN: 978-981-15-8366-7

Copyright Year: 2021

DOI
https://doi.org/10.1007/978-981-15-8366-7_64