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2021 | OriginalPaper | Chapter

Performance and Circuit Analysis of Independent Gate FinFET

Authors : Ankush Chattopadhyay, Chayanika Bose, K. Sarkar Chandan

Published in: Computers and Devices for Communication

Publisher: Springer Singapore

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Abstract

In this article, we examine the influence of separate gate biasing on independent gate FinFET and related circuit through RF performance, gain and harmonic distortion analysis. Non-quasi static channel approach is considered in the small-signal modelling of 4 T-IG-FinFET. Intrinsic parameters such as C_gs, C_gd, R_gd, τ_m, f_t, f_max are investigated over an wide range of frequency (10–100 GHz). The device is then employed to simulate a single stage cascode amplifier, which offers flexibility in controlling its noise margins, gain and HDs through the applied back gate bias.

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Title: Performance and Circuit Analysis of Independent Gate FinFET
Authors: Ankush Chattopadhyay
Chayanika Bose
K. Sarkar Chandan
Publisher: Springer Singapore
Book: Computers and Devices for Communication
Print ISBN: 978-981-15-8365-0

Electronic ISBN: 978-981-15-8366-7

Copyright Year: 2021
DOI: https://doi.org/10.1007/978-981-15-8366-7_63

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