Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WO_x) films and its MIS structure of Cu/Zr–WO_x/p-Si Schottky barrier diodes

Metal–insulator–semiconductor (MIS) structure of Cu/Zr–WO_x/p-Si Schottky diodes with different concentrations (0, 4 and 8 wt%) of Zr content were fabricated. The interfacial layer of zirconium–tungsten oxide (Zr–WO_x) film was grown on p-type silicon (p-Si) wafer using jet nebulizer spray pyrolysis (JNSP) technique at the substrate temperature of 400 °C. After that, the Cu electrode was coated on the Zr–WO_x film via vacuum deposition method. The multiphase (orthorhombic and cubic) crystal structures of Zr–WO_x were revealed by X-ray diffraction (XRD) pattern. The surface morphological analysis using scanning electron microscope (SEM) showed the dissimilar structures of surface and energy dispersive X-ray diffraction (EDX) confirmed the presence of W, Zr and O atoms. Using UV–Visible (UV–Vis) and DC elecrical (I–V) analysis, the minimum band gap energy and average conductivity were obtained for higher concentration (8 wt%) of Zr content. The minimum barrier height (Φ_B) and minimum ideality factor (n) values were attained for 4 wt% of Cu/Zr–WO_x/p-Si Schottky barrier diode (SBD) under illumination condition.