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Semiconductors
Published in: Semiconductors 6/2020

01-06-2020 | ELECTRONIC PROPERTIES OF SEMICONDUCTORS

Impedance Characteristics of γ-Irradiated (TlGaSe2)1 –x(TlInS2)x Solid Solutions

Authors: R. M. Sardarly, F. T. Salmanov, N. A. Aliyeva, R. M. Abbasli

Published in: Semiconductors | Issue 6/2020

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Abstract

Charge transport in (TlGaSe2)1 –x(TlInS2)x solid solutions in the frequency range of 20–106 Hz before and after γ irradiation is studied using impedance-spectroscopy methods. The relaxation character of the permittivity dispersion and the nature of the dielectric loss are established. The frequency dependence of the dissipation factor tanδ in the crystals of the (TlGaSe2)1 –x(TlInS2)x solid solutions is caused not only by relaxation polarization, but also by reach-through conductivity. The relaxation times are found to be τ = 10–3 s. It is determined that, in the frequency range of 105–5 × 105 Hz, the electrical conductivity obeys the regularity σ ~ fS (0.1 ≤ S ≤ 1.0), which is indicative of the conductivity over localized states. It is shown that a further increase in the frequency leads to an increase in the ionic conductivity and transition of the system to the superionic state.
next article Charge-Transfer Features in Zinc Sulfide Doped Layers in a Low-Frequency Alternating Electric Field

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Metadata
Title
Impedance Characteristics of γ-Irradiated (TlGaSe2)1 –x(TlInS2)x Solid Solutions
Authors
R. M. Sardarly
F. T. Salmanov
N. A. Aliyeva
R. M. Abbasli
Publication date
01-06-2020
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 6/2020
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782620060159

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