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Published in:
11-10-2016
Improved fatigue property of hafnium substitute lead zirconate titanate deposited by pulse laser deposition
Published in: Journal of Materials Science: Materials in Electronics | Issue 2/2017
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Abstract
Lead hafnate titanate (PHT) thin film was deposited by pulse laser deposition, characterized for the usage as a ferroelectric capacitor in view of Ferroelectric Random Access Memory (FeRAM) devices, and compared with a lead zirconate titanate (PZT) reference, which was fabricated in the same conditions. Results indicate that the 126 nm-thickness PHT thin film with a low temperature self-buffer layer has a single (111)-orientation. The following electric measurements were performed to investigate the possibility of this thin film to use in the FeRAM applications by contrast to a PZT reference. This PHT sample demonstrates a good ferroelectric property with the remanent polarization of 51 μC/cm2. The remanent polarization with no obvious degradation has been observed after 2 × 109 fatigue reversals, which indicate that the PHT thin film a promising candidate in view of FeRAM applications.