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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 10/2014

01-10-2014

Improvement in microwave dielectric properties of La(Mg0.5Sn0.5)O3 ceramics by applying ZnO–B2O3–SiO2

Authors: Yih-Chien Chen, Chih-Hung Li

Published in: Journal of Materials Science: Materials in Electronics | Issue 10/2014

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Abstract

The microwave dielectric properties of ZnO–B2O3–SiO2 (ZBS)-doped La(Mg0.5Sn0.5)O3 ceramics were investigated with a view to their application in microwave devices. ZBS-doped La(Mg0.5Sn0.5)O3 ceramics were prepared by the conventional solid-state method. The X-ray diffraction patterns of ZBS-doped La(Mg0.5Sn0.5)O3 ceramics exhibited no significant variation of phase with sintering temperature. By adding 2.0 wt% ZBS, a dielectric constant of 19.14, a quality factor (Q × f) of 35,800 GHz, and a temperature coefficient of resonant frequency τ f (−86 ppm/°C) were obtained when La(Mg0.5Sn0.5)O3 ceramics were sintered at 1,400 °C for 4 h.
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Metadata
Title
Improvement in microwave dielectric properties of La(Mg0.5Sn0.5)O3 ceramics by applying ZnO–B2O3–SiO2
Authors
Yih-Chien Chen
Chih-Hung Li
Publication date
01-10-2014
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 10/2014
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-2167-9

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