Influence of accuracy of crystallographic plane by specific crystallographic plane cutting of WEDM and post-processing of crystal surface contour

The influence of the accuracy of crystallographic plane is studied using specific crystallographic plane cutting of wire-cut electrical discharge machining (WEDM) and post-processing of crystal surface contour. First, the influence of crystallographic plane accuracy is analyzed using specific crystallographic plane cutting of WEDM. The WEDMed wafer-orientation precision is estimated using a single-point orientation error test combined with surface profile measurement. The influence of monocrystalline silicon surface outline after chemical corrosion and mechanical polishing on crystallographic orientation accuracy is examined using the same method. Results show that mechanical polishing and chemical etching only affect silicon wafer surface quality, whereas these processes have a minimal effect on silicon wafer surface contour and crystallographic orientation precision. The orientation precision of the silicon wafer surface is determined by WEDM and its contour, and subsequent processes have minimal influence on crystallographic orientation accuracy.