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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 20/2018

28-08-2018

Influence of Mg2SiO4 addition on crystal structure and microwave properties of Mg2Al4Si5O18 ceramic system

Authors: Xue Dong, Chengli Sun, Hongyu Yang, Leiyu Yang, Shuren Zhang

Published in: Journal of Materials Science: Materials in Electronics | Issue 20/2018

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Abstract

In this work, (1 − x)Mg2Al4Si5O18–xMg2SiO4 (x = 0–80 wt%) composite dielectric ceramics were prepared via traditional solid-state reaction. The results indicate the sinterability of Mg2Al4Si5O18 ceramics is greatly enhanced with the increasing content of Mg2SiO4 by reducing densified temperature from 1460 to 1340 °C. Rietveld refinement analysis shows a great chemical compatibility between two phases. With the increase of Mg2SiO4 content, the densifications of ceramics can be improved. However, excessive amount of Mg2SiO4 induces abnormal grain growth, which deteriorates the microwave dielectric properties. At x = 50 wt%, low-εr dielectric ceramics with high Q × f value was obtained when sintered at 1340 °C: εr = 5.73, Q × f = 76,374 GHz and τf = − 24 ppm/ °C. Relative cheap raw materials and adjustable permittivity values, which makes it promising for low-permittivity microwave applications.
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Metadata
Title
Influence of Mg2SiO4 addition on crystal structure and microwave properties of Mg2Al4Si5O18 ceramic system
Authors
Xue Dong
Chengli Sun
Hongyu Yang
Leiyu Yang
Shuren Zhang
Publication date
28-08-2018
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 20/2018
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-9912-4

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