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Journal of Materials Science: Materials in Electronics

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07-03-2017

Influence of P doping on transparent conductive property of SnO₂:P thin film

Authors: Xinyou Huang, Mengxian Feng, Chunhua Gao

Published in: Journal of Materials Science: Materials in Electronics | Issue 11/2017

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Abstract

P doped SnO₂ (PTO) thin films had been prepared by sol–gel dip coating method. The effect of phosphorus doping content, annealing temperature and coating times on microstructure and phase composition and optoelectrical properties of the PTO thin films were investigated by X-ray diffraction (XRD), Scanning electron microscope (SEM), four-point probe and UV–Vis spectrophotometer. The results showed that the PTO thin films exhibited the tetragonal rutile structure under all the experimental conditions. The square resistance of the PTO thin films decreased firstly and then increased with the increase of phosphorus doping content, annealing temperature and coating times. The surface smoothness and grain compactness were increased when annealing temperature increased. The PTO thin films had an optimal square sheet resistance of 8.9 kΩ/□ and high transparency of 95% in the visible region when P/Sn ratio was 2 mol% and annealing temperature was 450 °C and coating times was 14 layer.

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Title: Influence of P doping on transparent conductive property of SnO2:P thin film
Authors: Xinyou Huang
Mengxian Feng
Chunhua Gao
Publication date: 07-03-2017
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 11/2017
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-017-6451-3

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