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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 11/2017

07.03.2017

Influence of P doping on transparent conductive property of SnO2:P thin film

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 11/2017

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Abstract

P doped SnO2 (PTO) thin films had been prepared by sol–gel dip coating method. The effect of phosphorus doping content, annealing temperature and coating times on microstructure and phase composition and optoelectrical properties of the PTO thin films were investigated by X-ray diffraction (XRD), Scanning electron microscope (SEM), four-point probe and UV–Vis spectrophotometer. The results showed that the PTO thin films exhibited the tetragonal rutile structure under all the experimental conditions. The square resistance of the PTO thin films decreased firstly and then increased with the increase of phosphorus doping content, annealing temperature and coating times. The surface smoothness and grain compactness were increased when annealing temperature increased. The PTO thin films had an optimal square sheet resistance of 8.9 kΩ/□ and high transparency of 95% in the visible region when P/Sn ratio was 2 mol% and annealing temperature was 450 °C and coating times was 14 layer.
Vorheriger Artikel Influence of anodic passivation on electrical characteristics of Al/p-Si/Al and Al/V2O5/p-Si/Al diodes
Nächster Artikel Synthesis of nano-structured lanthanum tungstates photocatalysts

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Metadaten
Titel
Influence of P doping on transparent conductive property of SnO2:P thin film
Publikationsdatum
07.03.2017
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 11/2017
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-6451-3

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