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Published in: Journal of Materials Science: Materials in Electronics 6/2020

03-02-2020

Influence of Zn(II) on the structure, magnetic and dielectric dynamics of nano-LaFeO3

Authors: T. Lakshmana Rao, M. K. Pradhan, Saurabh Singh, S. Dash

Published in: Journal of Materials Science: Materials in Electronics | Issue 6/2020

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Abstract

We demonstrate in detail the influence of divalent non-magnetic metal ion Zn on the structural, magnetic ordering as well as the dielectric dynamics of nano-sized LaFeO3. Introduction of Zn at Fe site distorts the FeO6 octahedron near it evidencing from a shift in the most intense peak towards lower angle. Subsequent broadening of peaks signifies a lower particle size which is further supported by micrographs. With field history, temperature-dependent magnetization shows that the doped samples acquire a non-ergodic state at low temperature and the incompleteness of the phase transition even at very high temperature. The isothermal magnetization depicts a significant increase in magnetization at higher field with a decrease in coercivity. Extensive impedance and electrical modulus analysis are carried out to know the exact conduction process and relaxation mechanism adopted by the doping system. Impedance spectra reveal a non-Debye type of relaxation mechanism and with increase of Zn concentration and temperature, grain boundary effect dominates over grain effect. This grain and grain boundary effect is further confirmed through electrical modulus Nyquist plots. The activation energy values of grain and grain boundary are 0.37 eV and 0.47 eV for x = 0.1, 0.37 eV, 0.40 eV for x = 0.2 and 0.28 eV, 0.38 eV for x = 0.3, respectively. Accordingly, the doping system agreed with a p-type polaronic hopping. Furthermore, the frequency-dependent electrical conductivity data are explained in the framework of both Jonscher power law and Jump relaxation model.

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Metadata
Title
Influence of Zn(II) on the structure, magnetic and dielectric dynamics of nano-LaFeO3
Authors
T. Lakshmana Rao
M. K. Pradhan
Saurabh Singh
S. Dash
Publication date
03-02-2020
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 6/2020
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-03005-6

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