Interface Degradation in Short-Channel MOSFETs

The degradation in performance of short-channel MOSFETs induced by ionizing radiation is a crucial problem for space applications. According to the radiation type, dose and energy, various defects are formed at the interface, in the oxide and in the substrate. This defect generation is almost homogeneous along the channel and is, therefore, different from the damage induced by hot carrier injection into the gate oxide. Indeed, the aging of short-channel devices after electrical stress consists in the progressive formation of a greatly localized defective region close to the drain.