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Erschienen in:
1988 | OriginalPaper | Buchkapitel
Interface Degradation in Short-Channel MOSFETs
Comparison Between the Effects of Radiation and Hot Carrier Injection
verfasst von : H. Haddara, S. Cristoloveanu, B. Boukriss, A. Chovet, P. Jarron
Erschienen in: The Physics and Technology of Amorphous SiO2
Verlag: Springer US
Enthalten in: Professional Book Archive
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The degradation in performance of short-channel MOSFETs induced by ionizing radiation is a crucial problem for space applications. According to the radiation type, dose and energy, various defects are formed at the interface, in the oxide and in the substrate. This defect generation is almost homogeneous along the channel and is, therefore, different from the damage induced by hot carrier injection into the gate oxide. Indeed, the aging of short-channel devices after electrical stress consists in the progressive formation of a greatly localized defective region close to the drain.