Anzeige
Erschienen in:
1988 | OriginalPaper | Buchkapitel
Synthesis of Buried Dielectric Layers in Silicon by Ion Implantation
verfasst von : Ian H. Wilson
Erschienen in: The Physics and Technology of Amorphous SiO2
Verlag: Springer US
Enthalten in: Professional Book Archive
Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Some of the ideas presented here are expanded from a review of the synthesis of SiO2 by ion implantation written for the second radiation effects in insulators conference1. Since 1983 there have been many developments confirming (and a few contradicting) the theses and hypotheses contained therein. One major development has been the upsurge in interest in synthesis of buried layers of the nitrides and carbides of silicon and so these have been included here. This paper is an attempt to address the fundamental processes that occur when silicon is implanted with high doses of carbon, nitrogen and oxygen.