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Erschienen in:
1988 | OriginalPaper | Buchkapitel
Radiation-Induced Conductivity of Thin Silicon Dioxide Films on Silicon
verfasst von : V. A. Gurtov, A. I. Nazarov
Erschienen in: The Physics and Technology of Amorphous SiO2
Verlag: Springer US
Enthalten in: Professional Book Archive
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The use of electron and X-ray lithography in the production of semiconductor devices poses some problems related to the study of changes arising in dielectric films on the surface of semiconductors due to their interaction with ionizing radiation1. Of special interest in this respect is silicon dioxide which is most commonly used in microelectronics. Some aspects of radiation induced positive charge formation in silicon dioxide are well understood2–4. However, some aspects of charge transport in silicon dioxide films of MOS structures due to irradiation of the gate are still poorly studied.