Investigation of electrical and photovoltaic properties of Au/n-Si Schottky diode with BOD-Z-EN interlayer

4,4-Difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY) based BOD-Z-EN compound was used as an interfacial organic layer to fabrication of Au/BOD-Z-EN/n-Si/In diode. The electrical parameters of Au/BOD-Z-EN/n-Si/In diode such as ideality factor (n), barrier height (Φ_b) and series resistance (R_s) have been investigated through current–voltage (I–V) studies at dark and under various illumination intensities to understand the effect of interlayer on the device properties. The values found for the n varied from 2.33 to 1.55 and the Φ_b ranged from 0.86 to 0.90 eV as the illumination condition changed from dark to 100 mW/cm². Series resistance (R_s) values calculated using Cheung’s method were found to decrease with increasing illumination level. The forward bias I–V characteristics of the diode were explained by the space charge limited current theory. The main photovoltaic parameters such as open circuit voltage (V_oc), short circuit current density (J_sc) and fill factor (FF) were determined for various light intensity. The Au/BOD-Z-EN/n-Si/In diode exhibits a photovoltaic behavior with a V_oc of 150 mV and J_sc of 10 µA/cm² under 100 mw/cm². In addition, photosensitivity and photoresponsivity properties of the diode were determined. All these results indicate that Au/BOD-Z-EN/n-Si/In device can be used as photosensor in optoelectronic applications.