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Published in:
2001 | OriginalPaper | Chapter
Local Iterative Monte Carlo investigation of the influence of electron-electron scattering on short channel Si-MOSFETs
Authors : J. Jakumeit, U. Ravaioli
Published in: Simulation of Semiconductor Processes and Devices 2001
Publisher: Springer Vienna
Included in: Professional Book Archive
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The Local Iterative Monte Carlo (LIMO) technique is used to investigate the effect of electron-electron scattering on hot electron effects in Si-MOSFETS with channel length as short as 25 nm. The results indicate that electron-electron scat- tering might be an important source for hot electrons in the next generations of Si-MOSFETs. But the effect decreases if the channel length comes close to 25 nm.