Advertisement
Published in:
01-07-2015
Low current consuming thermally stable sulphide phase change memory
Published in: Journal of Materials Science: Materials in Electronics | Issue 7/2015
Log inActivate our intelligent search to find suitable subject content or patents.
Select sections of text to find matching patents with Artificial Intelligence. powered by
Select sections of text to find additional relevant content using AI-assisted search. powered by
Abstract
We show that phase change media based on the gallium and lanthanum chalcogenides can outperform the well know benchmark performance of germanium antimony telluride devices in two key specifications thermal stability and power consumption. Through the fabrication and characterisation of identical nanoscale gallium lanthanum sulphide and germanium antimony telluride based devices, we show that the former compounds offer lower current consumption, while still exhibiting a relatively high resistance in both phases and high resistance contrast between phases, comparable to an equivalent germanium antimony telluride device. We also demonstrate that these sulphide-based devices continue to display a measurable threshold and retain information at temperatures above 500 °C, considerably outperforming conventional telluride based devices.