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Published in:
01-07-2015
Luminescence characteristics of CuI film by iodine annealing
Published in: Journal of Materials Science: Materials in Electronics | Issue 7/2015
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Abstract
P-type CuI semiconductor films were deposited on the quartz substrates by vacuum evaporation technique, and their morphology, chemical stoichiometry, structure and photoluminescence (PL) characteristics were investigated.
The results indicated that, by iodine annealing, the 422 nm emission of the film was improved, whereas the 720 nm emission was reduced, and a (111) preferred orientation in the film was kept unchanged. Through analyzing the time-dependent PL spectrum and the conductivity of the iodine annealed CuI film, the origin of the 422 nm emission was proposed to be related to the copper vacancy. This mechanism was further confirmed by the luminescence characteristics of the film deposited on Cu substrate.