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Published in:
27-01-2016
Lutentium incorporation influence on ZnO thin films coated via a sol–gel route: spin coating technique
Published in: Journal of Materials Science: Materials in Electronics | Issue 5/2016
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Abstract
Pure and lutetium (Lu) incorporated zinc oxide (ZnO) thin films were deposited by a sol–gel route. The effect of Lu contribution on the properties of ZnO was examined in detail by means of XRD, AFM, SEM, UV–Vis spectrophotometer, and I–V measurements. The nano-sized ZnO:Lu samples had hexagonal wurtzite structure with c-axis (002) preferential orientation. The pure ZnO nano-particles homogeneously scattered on the film surface and this homogeneous particle distribution was deteriorated with Lu incorporation. Ohmic contacts to the ZnO:Lu films were formed using gold (Au) metallization schemes. As-deposited Au contacts exhibited linear current–voltage characteristics. The optical band gap for pure ZnO went up from 3.281 to 3.303 eV with low Lu contribution level up to 3 at.%, then it decreased with more Lu level. The Urbach energy was also studied and it was found that Eu depended on Lu incorporation level.