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Journal of Materials Science

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03-01-2022 | Advanced Nanomaterials

Mathematical modeling of electron density arrangement in CSDG MOSFET: a nano-material approach

Authors: Naveenbalaji Gowthaman, Viranjay M. Srivastava

Published in: Journal of Materials Science | Issue 18/2022

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Abstract

The CMOS technology with MOSFETs below 70 nm node for Semiconductor Industry Association roadmap has outstanding resistance to short-channel effect and improves the scalability of the device. Cylindrical surrounding double-gate (CSDG) MOSFETs have been proposed as a suitable CMOS substitute to reduce the area and power tradeoff. This paper presents mathematical modeling of the electron density arrangement in the CSDG MOSFET for hybrid RF applications. In this device, the arbitrary alloy of Aluminum Gallium Arsenide (AlGaAs) has been used. This material lies between Aluminum Arsenide and Gallium Arsenide. High electron mobility and the lesser bandgap in AlGaAs make it suitable for the design of CSDG MOSFET for low-frequency applications. In the middle of CSDG MOSFET, the electron density (N²D) has been observed to be 1.92 × 10¹³ cm⁻² for arbitrary alloy-based MOSFET and 1.02 × 10¹³ cm⁻² for the conventional SiO₂-based MOSFET towards the drain terminal. The electron density has been observed to be 7.90 × 10¹² cm⁻² for arbitrary alloy-based MOSFET and 5.86 × 10¹² cm⁻² for the conventional SiO₂-based MOSFET along the channel. The results show that the average speed of the electron inside the device channel is submissive to the conventional MOSFET.

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Title: Mathematical modeling of electron density arrangement in CSDG MOSFET: a nano-material approach
Authors: Naveenbalaji Gowthaman
Viranjay M. Srivastava
Publication date: 03-01-2022
Publisher: Springer US
Published in: Journal of Materials Science / Issue 18/2022
Print ISSN: 0022-2461
Electronic ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-021-06717-0

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