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Journal of Materials Science
Erschienen in: Journal of Materials Science 18/2022

03.01.2022 | Advanced Nanomaterials

Mathematical modeling of electron density arrangement in CSDG MOSFET: a nano-material approach

verfasst von: Naveenbalaji Gowthaman, Viranjay M. Srivastava

Erschienen in: Journal of Materials Science | Ausgabe 18/2022

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Abstract

The CMOS technology with MOSFETs below 70 nm node for Semiconductor Industry Association roadmap has outstanding resistance to short-channel effect and improves the scalability of the device. Cylindrical surrounding double-gate (CSDG) MOSFETs have been proposed as a suitable CMOS substitute to reduce the area and power tradeoff. This paper presents mathematical modeling of the electron density arrangement in the CSDG MOSFET for hybrid RF applications. In this device, the arbitrary alloy of Aluminum Gallium Arsenide (AlGaAs) has been used. This material lies between Aluminum Arsenide and Gallium Arsenide. High electron mobility and the lesser bandgap in AlGaAs make it suitable for the design of CSDG MOSFET for low-frequency applications. In the middle of CSDG MOSFET, the electron density (N2D) has been observed to be 1.92 × 1013 cm−2 for arbitrary alloy-based MOSFET and 1.02 × 1013 cm−2 for the conventional SiO2-based MOSFET towards the drain terminal. The electron density has been observed to be 7.90 × 1012 cm−2 for arbitrary alloy-based MOSFET and 5.86 × 1012 cm−2 for the conventional SiO2-based MOSFET along the channel. The results show that the average speed of the electron inside the device channel is submissive to the conventional MOSFET.
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Literatur
1.
Del Alamo JA, Antoniadis DA, Lin J, Wenjie Lu, Vardi A, Zhao X (2016) Nanometer-scale III-V MOSFETs. IEEE J Electron Devices Soc 4(5):205–214CrossRef
2.
Fleetwood DM (2018) Evolution of total ionizing dose effects in MOS devices with Moore’s law scaling. IEEE Trans Nucl Sci 65(8):1465–1481CrossRef
3.
4.
RK Keinigs et al. (2001) Material science experiments at the Atlas facility. In: 28th IEEE international conference on plasma science and 13th IEEE international pulsed power conference, 17–22 June 2001, pp. 366–385
5.
Uchechukwu MA, Srivastava VM (2020) Channel length scaling pattern for cylindrical surrounding double-gate (CSDG) MOSFET. IEEE Access 8:121204–121210CrossRef
6.
Colinge JP (2008) FinFETs, and other multi-gate transistors. Springer, New YorkCrossRef
7.
P Schygulla, F Heinz, D Lackner, F Dimroth (2020) Subcell development for wafer-bonded III-V//Si tandem solar cells. In: 47th IEEE Photovoltaic Specialists Conf., Calgary, Canada, 15 June–21 Aug. 2020, pp. 2716–2719
8.
Wu C, Huang R, Huang Q, Wang C, Wang J, Wang Y (2014) An analytical surface potential model accounting for the dual-modulation effects in tunnel FETs. IEEE Trans on Electron Devices 61(8):2690–2696CrossRef
9.
Sen D, Goswami B, Dey A, Saha P, Sarkar SK (2020) Impact of self-heating and nano-gap filling factor on AlGaAs/GaAs junction-less DG-MOSFET based biosensor for early-stage diagnostics. In: IEEE region 10 symposium, Dhaka, Bangladesh, 5–7 June 2020 pp. 662–665
10.
Villa J, Ramiro I, Ripalda JM, Tobías I, Garcia Linares P, Antolin E, Marti A (2021) Contribution to the study of sub-bandgap photon absorption in quantum dot InAs/AlGaAs intermediate band solar cells. IEEE J Photovolt 11(2):420–428CrossRef
11.
Allaei M, Shalchian M, Jazaeri F (2020) Modeling of short-channel effects in GaN HEMTs. IEEE Trans Electron Devices 67(8):3088–3094CrossRef
12.
Liu X, Shur MS (2020) TCAD model for TeraFET detectors operating in a large dynamic range. IEEE Trans Terahertz Sci Technol 10(1):15–20CrossRef
13.
Kumar V, Roy DR (2018) Structure, bonding, stability, electronic, thermodynamic and thermoelectric properties of six different phases of indium nitride. J Mater Sci 53:8302–8313CrossRef
14.
Shang ZW, Qian Xu, He GY, Zheng ZW, Cheng CH (2021) Effect of plasma oxidation on the tin-oxide active layer for thin-film transistor applications. J Mater Sci 56:6286–6291CrossRef
15.
Yang YF, Ren P, Bao ZB, Zhu SL, Wang FH, Li W (2020) Microstructure and cyclic oxidation of a Hf-doped (Ni, Pt)Al coating for single-crystal superalloys. J Mater Sci 55:11687–11700CrossRef
16.
Kahraman A, Deevi SC, Yilmaz E (2020) Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices. J Mater Sci 55:7999–8040CrossRef
17.
Yonghong Chen Lu, Wang LL, Tang L, Yuan Xi, Chen H, Zhou K, Zhang D (2021) Thickness-dependent ferroelectric properties of HfO2/ZrO2 nanolaminates using atomic layer deposition. J Mater Sci 56:6064–6072CrossRef
18.
Lin Z, Li X, Zeng Y, You M, Wang F, Liu J (2020) The electronics transport mechanism of grain and grain boundary in semiconductive hafnium oxynitride thin film. J Mater Sci 55:2881–2890CrossRef
19.
Nie X, Ma D, Ma F, Kewei Xu (2017) Thermal stability, structural and electrical characteristics of the modulated HfO2/Al2O3 films fabricated by atomic layer deposition. J Mater Sci 52:11524–11536CrossRef
20.
Kuankuan Lu, Yao R, Wang Y, Ning H, Guo D, Liu X, Tao R, Miao Xu, Wang L, Peng J (2019) Effects of praseodymium doping on the electrical properties and aging effect of InZnO thin-film transistor. J Mater Sci 54:14778–14786CrossRef
21.
Jones KA, Chow TP, Wraback M, Shatalov M, Sitar Z, Shahedipour F, Udwary K, Tompa GS (2015) AlGaN devices and growth of device structures. J Mater Sci 50:3267–3307CrossRef
22.
Walther T, Amari H, Ross IM, Wang T, Cullis AG (2013) Lattice resolved annular dark-field scanning transmission electron microscopy of (Al, In)GaN/GaN layers for measuring segregation with sub-monolayer precision. J Mater Sci 48:2883–2892CrossRef
23.
Dargar SK, Srivastava VM (2020) Design of double-gate tri-active layer channel based IGZO thin-film transistor for improved performance of ultra-low-power RFID rectifier. IEEE Access 8:194652–194662CrossRef
24.
Firsov DA, Makhov IS, Panevin VY, Vinnichenko MY, Vorobjev LE, Vasil'ev AP, Maleev NA (2018) Enhance of impurity related terahertz emission in optically pumped GaAs/AlGaAs quantum well structures. In: 43rd International conference on infrared, millimeter, and terahertz waves (IRMMW-THz), Nagoya 9–14 Sep 2018 pp. 1–2
25.
Stark D, Persichetti L, Montanari M, Ciano C, Di Gaspare L, De Seta M, Zoellner M, Skibitzki O, Capellini G, Ortolani M, Baldassarre L, Virgilio M, Grange T, Birner S, Rew K, Paul DJ, Faist J, Scalar G (2019) N-Type Ge/SiGe quantum cascade heterostructures for THz emission. In: Conference on lasers and electro-optics Europe & European quantum electronics conference (CLEO/Europe-EQEC), Munich, Germany, 23–27 June pp. 1–1
26.
Dewan MI, Kashem MTB, Subrina S (2016) Characteristic analysis of triple material tri-gate junction-less tunnel field-effect transistor. In: 9th International Conference on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, 20–22 Dec 2016 pp. 333–336
27.
Srivastava VM, Singh G (2013) MOSFET technologies for double-pole four throw radio frequency switch. Springer International Publishing, Berlin
28.
Gowthaman N, Srivastava VM (2021) Analysis of n-type double-gate MOSFET (at nanometer scale) using high-k dielectrics for high-speed applications. In: 44th International Spring seminar on electronics technology, advancements in microelectronics packaging for harsh environment, Bautzen, Germany, 6–7 May 2021 pp. 130-131
29.
da Nobrega RVT, Fonseca YM , Costa RA, Duarte UR (2018) Comparative study on the performance of silicon and III-V nanowire gate-all-around field-effect transistors for different gate oxides. In: XIII Workshop on Semiconductors and Micro and Nano Technology, Sao Bernardo do Campo, Brazil, 19-20 April 2018 pp. 9-10
30.
Sharma S, Rewari S, Nath V, Deswal SS, Gupta RS (2020) Schottky barrier double surrounding gate MOSFET for high-frequency implementation. In: 5th IEEE International conference on recent advances and innovations in engineering (ICRAIE), Jaipur, India, 1–3 Dec 2020 pp. 1–4
31.
Gowthaman N, Srivastava VM (2021) Capacitive modeling of cylindrical surrounding double-gate MOSFETs for hybrid RF applications. IEEE Access 9:89234–89242CrossRef
32.
Datta S (2005) Quantum transport: atom to transistor. Cambridge University Press, New YorkCrossRef
33.
Luisier M, Klimeck G (2010) Simulation of nanowire tunneling transistors: from the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling. J Appl Phys 107(8):84507CrossRef
34.
Guan Y, Li Z, Zhang W, Zhang Y (2017) An accurate analytical current model of double-gate heterojunction tunneling FET. IEEE Trans on Electron Devices 64(3):938–944CrossRef
35.
Fahad HM, Hussain MM (2013) High-performance silicon nanotube tunneling FET for ultralow-power logic applications. IEEE Trans on Electron Devices 60(3):1034–1039CrossRef
36.
Oh SH et al (2000) Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs. IEEE Electron Device Lett 21(9):445–447CrossRef
37.
Verma JHK et. Al (2014) RF performance analysis and small-signal parameter extraction of cylindrical surrounding double gate MOSFETs for sub-millimeter wave applications. In: 2nd International conference on devices, circuits and systems (ICDCS), Coimbatore, India, pp. 1–5
38.
Gowthaman N, VM Srivastava (2021) Arbitrary alloy semiconductor material based DG MOSFET for high-frequency industrial and hybrid consumer applications. In: 14th IEEE International conference on AFRICON, Arusha, Tanzania, 13–15 Sept 2021, pp. 583–587
39.
Passlack M (2006) Off-state current limits of narrow bandgap MOSFETs. IEEE Trans Electron Devices 53(11):2773–2778CrossRef
40.
Gong Z, Chang H, Wang S, Li Y, Sun B, Liu H (2016) Simulation study of enhancement-mode n-type InGaAs MOSFETs with a low zero bias off-current. IEEE International nanoelectronics conference (INEC), Chengdu, China, 9-11 May 2016 pp. 1-2
41.
Lin J, Antoniadis DA, Del Alamo JA (2015) Physics and mitigation of excess OFF-state current in InGaAs quantum-well MOSFETs. IEEE Trans Electron Devices 62(5):1448–1455CrossRef
Metadaten
Titel
Mathematical modeling of electron density arrangement in CSDG MOSFET: a nano-material approach
verfasst von
Naveenbalaji Gowthaman
Viranjay M. Srivastava
Publikationsdatum
03.01.2022
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 18/2022
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-021-06717-0

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