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03.01.2022 | Advanced Nanomaterials

NIR-OLED structures based on lanthanide coordination compounds: synthesis and luminescent properties

verfasst von: Artem Barkanov, Anna Zakharova, Tatjana Vlasova, Ekaterina Barkanova, Andrew Khomyakov, Igor Avetissov, Ilya Taydakov, Nikolay Datskevich, Victoria Goncharenko, Roman Avetisov

Erschienen in: Journal of Materials Science | Ausgabe 18/2022

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Abstract

Electroluminescence complexes based on ytterbium and 5-methyl-2-phenyl-4-(2,2,2-trifluoroacetyl)-2,4-dihydro-3H-pyrazol-3-one (HL) ligand and various diimine-type ancillary ligands (2,2-bipyridine, bathophenanthroline, 1,10-phenanthroline) have been synthesized, and corresponding crystals were investigated. [Yb(L)₃(bipy)] and [Yb(L)₃(bath)] complexes have triclinic structure (P-1), while [Yb(L)₃(phen)] complex has orthorhombic structure (P2₁2₁2₁). The crystallography parameters were determined. The photoluminescence of the complexes demonstrated only bands resulted from \(^{2} F_{5/2}^{{}} \to^{2} F_{7/2}^{{}}\) transition and corresponding three Stark subcomponents generated due to the crystal field action. NIR-OLED structures with emitting layers based on the [Yb(L)₃(bipy)], [Yb(L)₃(bath)], and [Yb(L)₃(phen)] complexes have been fabricated, and their electroluminescence demonstrated maxima intensities at 978 and 1005 nm. Comparison of NIR-OLEDs power density showed that the maximal power densities of 2.17 (978 nm) and 1.92 (1005 nm) μW × cm⁻² were determined for the NIR-OLED based on [Yb(L)₃(bath)] complex.

Vorheriger Artikel Mathematical modeling of electron density arrangement in CSDG MOSFET: a nano-material approach

Nächster Artikel Non-linear response under terahertz radiation of an asymmetric Ga1−xAlxAs/GaAs/Ga1−yAlyAs V-groove nanowire confining a singly-ionized double donor

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Titel: NIR-OLED structures based on lanthanide coordination compounds: synthesis and luminescent properties
verfasst von: Artem Barkanov
Anna Zakharova
Tatjana Vlasova
Ekaterina Barkanova
Andrew Khomyakov
Igor Avetissov
Ilya Taydakov
Nikolay Datskevich
Victoria Goncharenko
Roman Avetisov
Publikationsdatum: 03.01.2022
Verlag: Springer US
Erschienen in: Journal of Materials Science / Ausgabe 18/2022
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-021-06721-4

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