Top

Journal of Materials Science: Materials in Electronics

Published in:

12-02-2020

MBE growth of InAs/GaAs quantum dots on sintered porous silicon substrates with high optical quality in the 1.3 μm band

Authors: Mansour Aouassa, Giorgia Franzò, Elie Assaf, Larbi Sfaxi, Ridha M’Ghaieth, Hassen Maaref

Published in: Journal of Materials Science: Materials in Electronics | Issue 6/2020

Activate our intelligent search to find suitable subject content or patents.

search-config

AI-assisted search

Off

Abstract

We report self-assembled InAs/GaAs quantum dots (QDs) monolithically grown on a compliant transferable silicon nanomembrane. The transferable silicon nanomembrane with flat continuous crystalline silicon layer formed via in situ porous silicon sintering is considered a low-cost seed for heteroepitaxy of free-standing single-crystalline foils for photovoltaic cells. In this paper, the compliant feature of transferable silicon nanomembrane has been exploited for direct growth of high-quality InAs/GaAs (QDs) by molecular beam epitaxy. Bright 1.3 µm room temperature photoluminescence from InAs/GaAs QDs has been obtained. The excellent structural and optical qualities of the obtained InAs/GaAs quantum dots offer great opportunities for realizing a low-cost and large-scale integration of III–V-based optoelectronic device on silicon.

previous article Holmium (Ho)-coated ZnO nanorods: an investigation of optoelectronic properties

next article Mercury sulfide thin film deposition using [HgI4]2− complex ions

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 340 Zeitschriften

aus folgenden Fachgebieten:

Bauwesen + Immobilien
Business IT + Informatik
Finance + Banking
Management + Führung
Marketing + Vertrieb
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

L. Güniat, S. Martí-Sánchez, O. Garcia, M. Boscardin, D. Vindice, N. Tappy, M. Friedl, W. Kim, M. Zamani, L. Francaviglia, A. Balgarkashi, J.-B. Leran, J. Arbiol, A. Fontcuberta i Morral, ACS Nano 13(5), 5833–5840 (2019). https://doi.org/10.1021/acsnano.9b01546 CrossRef

R. Cariou, J. Benick, F. Feldmann, O. Höhn, H. Hauser, P. Beutel, N. Razek, M. Wimplinger, B. Bläsi, D. Lackner, M. Hermle, G. Siefer, S.W. Glunz, A.W. Bett, F. Dimroth, Nat. Energy 3, 326–333 (2018)CrossRef

J. Wu, M. Tang, H. Liu, Photon. Res. 6(4), 321–325 (2018). https://doi.org/10.1364/PRJ.6.000321 CrossRef

J. Seidl, J.G. Gluschke, X. Yuan, S. Naureen, N. Shahid, H.H. Tan, C. Jagadish, A.P. Micolich, P. Caroff, Regaining. Nano Lett. 19(7), 4666–4677 (2019)CrossRef

C. Merckling, S. Jiang, Z. Liu, N. Waldron, G. Boccardi, R. Rooyackers, Z. Wang, B. Tian, M. Pantouvaki, N. Collaert, J. Van Campenhout, M. Heyns, D. Van Thourhout, W. Vandervorst, A. Thean, ECS Trans. 66(4), 107–116 (2015)CrossRef

B. Kunert, Y. Mols, M. Baryshniskova, N. Waldron, A. Schulze, R. Langer, Semicond. Sci. Technol. 33, 093002 (2018)CrossRef

A. Zhou, Y. Ping Wang, C. Cornet, Y. Léger, L. Pédesseau, V. Favre-Nicolin, G.A. Chahine, T.U. Schülli, J. Eymery, M. Bahri, L. Largeau, G. Patriarche, O. Durand, A. Létoublon, J. Appl. Cryst. 52, 809–815 (2019)CrossRef

N. Ozaki, D. Childs, A. Boldin, D. Ikuno, K. Onoue, H. Ohsato, E. Watanabe, N. Ikeda, Y. Sugimoto, R. Hogg, Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 1093911. https://doi.org/10.1117/12.2509984

S.-Y. Lin, Y.-J. Tsai, S.-C. Lee, Jpn. J. Appl. Phys. 40, L1290–L1292 (2001)CrossRef

10.

Lukianov, K. Murakami, C. Takazawa, M. Ihara, Appl. Phys. Lett. 108, 213904 (2016)CrossRef

11.

Hariharsudan, S. Radhakrishnan, R. Martini, V. Depauw, K. Van Nieuwenhuysena, T. Bearda, I. Gordon, J. Szlufcik, J. Poortmans, Solar Energy Mater. Solar Cells 135, 113–123 (2015)CrossRef

12.

P.H.J. Kim, V. Depauw, G. Agostinelli, G. Beaucarne, J. Poortmans, Thin Solid Films 511–512, 411–414 (2006)

13.

C.S. Solanki, L. Carnel, K. Van Nieuwenhuysen, A. Ulyashin, N. Posthuma, G. Beaucarne, J. Poortmans, Prog. Photovolt.: Res. Appl. 13, 201–208 (2005)CrossRef

14.

Boucherif, N.P. Blanchard, P. Regreny, O. Marty, G. Guillot, G. Grenet, V. Lysenko, Thin Solid Films 518(9), 2466–2469 (2010)CrossRef

15.

M. Aouassa, S. Escoubas, A. Ronda, L. Favre, S. Gouder, R. Mahamdi, E. Arbaoui, A. Halimaoui, I. Berbezier, Appl. Phys. Lett. 101, 233105 (2012)CrossRef

16.

M. Aouassa, I. Jadli, L.S. Hassayoun, H. Maaref, G. Panczer, L. Favre, A. Ronda, I. Berbezier, Superlatt. Microstruct. 112, 493–498 (2017)CrossRef

17.

I. Berbezier, J.-N. Aqua, M. Aouassa, L. Favre, S. Escoubas, A. Gouyé, A. Ronda, Phys. Rev. B 90, 035315 (2014)CrossRef

18.

C.S. Solanki, R.R. Bilyalov, J. Poortmans, R. Mertens, Solar Energy Mater. Solar Cells 83(1), 101–113 (2004)CrossRef

19.

S. Kitamura, M. Senshu, T. Katsuyama, Y. Hino, N. Ozaki, S. Ohkouchi, Y. Sugimoto, R.A. Hogg, Nanoscale Res. Lett. 10, 231 (2015)CrossRef

20.

Y. Hino, N. Ozaki, S. Ohkouchi, N. Ikeda, Y. Sugimoto, Growth of InAs/GaAs quantum dots with central emission wavelength of 1.05 μm using In-flush technique for broadband near-infrared light source. J. Cryst. Growth 378, 01–505 (2013)CrossRef

21.

F. Guffarth, R. Heitz, A. Schliwa, K. Pötschke, D. Bimberg, Observation of monolayer-splitting for InAs/GaAs quantum dots. Physica E 21, 326–330 (2004)CrossRef

22.

R. Heitz, F. Guffarth, K. Pötschke, A. Schliwa, D. Bimberg, N.D. Zakharov et al., Shell-like formation of self-organized InAs/GaAs quantum dots. Phys. Rev. B 71(045325), 1–7 (2005)

23.

Y. Wan, Q. Li, Y. Geng, B. Shi, K.M. Lau, Appl. Phys. Lett. 107, 081106 (2015)CrossRef

Title: MBE growth of InAs/GaAs quantum dots on sintered porous silicon substrates with high optical quality in the 1.3 μm band
Authors: Mansour Aouassa
Giorgia Franzò
Elie Assaf
Larbi Sfaxi
Ridha M’Ghaieth
Hassen Maaref
Publication date: 12-02-2020
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 6/2020
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-020-03012-7

Springer Professional

Abstract

Please log in to get access to your license.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Springer Professional "Technik"

Springer Professional "Wirtschaft"

Other articles of this Issue 6/2020

Facile constructing ZnO/ZnCO3 heterojunction for high-performance photocatalytic NO oxidation and reaction pathway study

Defects, electronic properties, and α particle energy spectrum response of the Cd0.9Mn0.1Te: V single crystal

Effect of grain boundary on failure behavior of SABI333 solder joints during creep

Synthesis and electrochemical performance of Sb2WO6@PPy as novel anode material for lithium ion battery application

Influence of Bi sources on TiO2/Bi2S3 composite films prepared by hydrothermal method

β-FeOOH catalyzed peroxymonosulfate for organic pollutant degradation in water: radical and non-radical mechanism