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Journal of Electronic Materials
Published in: Journal of Electronic Materials 10/2004

01-10-2004 | Special Issue Paper

Mechanism of interfacial reaction for the Sn-Pb solder bump with Ni/Cu under-bump metallization in flip-chip technology

Authors: Guh-Yaw Jang, Chien-Sheng Huang, Li-Yin Hsiao, Jenq-Gong Duh, Hideyuki Takahashi

Published in: Journal of Electronic Materials | Issue 10/2004

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previous article Bromine- and chlorine-induced degradation of gold-aluminum bonds
next article Correlation between interfacial reactions and mechanical strengths of Sn(Cu)/Ni(P) solder bumps

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Metadata
Title
Mechanism of interfacial reaction for the Sn-Pb solder bump with Ni/Cu under-bump metallization in flip-chip technology
Authors
Guh-Yaw Jang
Chien-Sheng Huang
Li-Yin Hsiao
Jenq-Gong Duh
Hideyuki Takahashi
Publication date
01-10-2004
Publisher
Springer-Verlag
Published in
Journal of Electronic Materials / Issue 10/2004
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-004-0113-y

Other articles of this Issue 10/2004

Journal of Electronic Materials 10/2004 Go to the issue

Special Issue Paper

Self-assembled Au nanoparticle superlattice via a displacement reaction

Special Issue Paper

Influence of Cu addition to interface microstructure between Sn-Ag solder and Au/Ni-6P plating

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Interface reaction between Ni and amorphous SiC

Regular Issue Paper

Effects of excess Bi concentration, buffered Bi2O3 layer, and Ta doping on the orientation and ferroelectricity of chemical-solution-deposited Bi3.25La0.75Ti3O12 films

Regular Issue Paper

The effect of microstructural and geometrical features on the reliability of ultrafine flip chip microsolder joints

Special Issue Paper

Under bump metallurgy study on copper/low-k dielectrics for fine pitch flip chip packaging