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Journal of Computational Electronics
Published in: Journal of Computational Electronics 4/2017

02-09-2017 | S.I. : Computational Electronics of Emerging Memory Elements

Memory selector devices and crossbar array design: a modeling-based assessment

Author: An Chen

Published in: Journal of Computational Electronics | Issue 4/2017

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Abstract

Functional and scalable memory selector devices are essential for high-density memory and storage. This paper reviews the performance requirements and device options of two-terminal memory selectors for crossbar arrays. In a large crossbar array without appropriate selector devices, large number of sneak paths will significantly degrade the reading signal and writing conditions. Asymmetry and nonlinearity in selector device characteristics can both improve crossbar array operation by making sneak paths more resistive. Rectifying diodes, nonlinear devices, and volatile switches can provide basic selector functions; however, they also need to be balanced with memory elements and meet rigorous requirements in large arrays. Modeling plays an important role in the assessment of selector device function and crossbar array performance. This paper will review the selector device and crossbar array modeling approaches and summarize key observations. The design of large crossbar arrays with functional selector devices requires a comprehensive approach that incorporates device characteristics, array parameters, operation conditions, and application specifications.
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Metadata
Title
Memory selector devices and crossbar array design: a modeling-based assessment
Author
An Chen
Publication date
02-09-2017
Publisher
Springer US
Published in
Journal of Computational Electronics / Issue 4/2017
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-017-1059-7

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Journal of Computational Electronics 4/2017 Go to the issue

S.I.: Computational Electronics of Emerging Memory Elements

From materials to systems: a multiscale analysis of nanomagnetic switching

S.I. : Computational Electronics of Emerging Memory Elements

Theoretical insights and experimental characterization of -based OxRRAMs operation

S.I.: Computational Electronics of Emerging Memory Elements

Cross-point memory design challenges and survey of selector device characteristics

S.I. : Computational Electronics of Emerging Memory Elements

Ab initio calculation of thermal boundary resistance at the interface of metals with GeTe, InSbTe and InGeTe phase change compounds

S.I.: Computational Electronics of Emerging Memory Elements

Design rules for threshold switches based on a field triggered thermal runaway mechanism

S.I. : Computational Electronics of Emerging Memory Elements

Toward reliable RRAM performance: macro- and micro-analysis of operation processes