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Published in:
01-10-2014
Microstructure and texture evolution of CeO2 buffer layers fabricated via CSD method in reducing atmosphere with different flow rates
Published in: Journal of Materials Science: Materials in Electronics | Issue 10/2014
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Abstract
We analyzed the texture and microstructure evolution of CeO2 buffer layers fabricated on NiW (00l) substrates by chemical solution deposition methods in reducing gas with different flow rates. The texture and morphology of CeO2 films were examined by X-ray diffraction and atomic force microscopy. Results show that CeO2 films with preferred (00l) orientation have been obtained in Ar-4%H2 with flow rate greater than 1.95 × 10−3 m/s. The crystalline degree and texture degree of CeO2 films are strongly dependent on flow rate of reducing gas. Moreover, the larger flow rate of reducing gas is helpful to the formation of single-phase CeO2 film and the decrease of RMS of CeO2 films. The texture and microstructure evolution of CeO2 thin film is related to the oxygen vacancies concentration in CeO2 lattice.