Advertisement
Published in:
26-12-2016
Microwave annealing enhances formation of silicon quantum dots in oxide matrix
Published in: Journal of Materials Science: Materials in Electronics | Issue 7/2017
Log inActivate our intelligent search to find suitable subject content or patents.
Select sections of text to find matching patents with Artificial Intelligence. powered by
Select sections of text to find additional relevant content using AI-assisted search. powered by
Abstract
In this work, an effective strategy for the controlled synthesis of Si-QDs embedded Si-rich silicon oxide/SiO2 (SRO/SiO2) multilayers using susceptor-assisted microwave annealing (MWA) is introduced. Both MWA and rapid thermal annealing (RTA) were compared to study the growth of Si-QDs embedded in SRO/SiO2 multilayers, and found that the temperature required for forming Si-QDs decreases by 200 °C under MWA. SRO single-layer films were used for the investigation of growth mechanism during MWA. It is shown that MWA annealing could enhance the phase separation in SRO films and more Si-QDs precipitated in SRO film annealed by MWA than RTA one. These results demonstrate that the microwave electromagnetic field has unique influence on the generated Si-QDs, can be considered as an archetype of a non-thermal microwave effect.