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Journal of Computational Electronics

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01-03-2015

mm-Wave noise modeling in advanced SiGe and InP HBTs

Authors: P. Sakalas, M. Schroter, H. Zirath

Published in: Journal of Computational Electronics | Issue 1/2015

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Abstract

DC, RF and noise characteristics of advanced InP/InGaAs and Si/SiGe heterojunction bipolar transistors (HBTs) were measured and modeled in a broad frequency range. Equations for systematically modeled correlated noise in bipolar transistors and their implementation in the compact models HICUM/L0 and L2 are proposed. The models are verified for advanced SiGe HBTs up to 300 GHz by hydrodynamic device simulation and by results from the Boltzmann transport equation. The verified model was used for analyzing the noise of advanced InP/InGaAs and Si/SiGe HBTs. Compared to Si/SiGe HBTs a higher noise at lower frequencies was observed in InP/InGaAs HBTs due to a higher base recombination current. InP HBTs shows a good noise performance beyond 100 GHz and due to their better \(f_{\mathrm{T}}\,\times ~BV_{\mathrm{CE0}}\) product can compete with advanced Si/SiGe HBTs for LNA design at mm-wave frequencies.

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As discussed in [21], \(BV_{\mathrm{CEO}}\) will be ultimately limited by tunneling rather than impact ionization. Since \(BV_{\mathrm{CEO}}\) is also often not the relevant breakdown voltage in, e.g., amplifier design, its value is of limited usefulness, especially when comparing technologies with very different current gain.

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Title: mm-Wave noise modeling in advanced SiGe and InP HBTs
Authors: P. Sakalas
M. Schroter
H. Zirath
Publication date: 01-03-2015
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 1/2015
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-015-0664-6

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