Ausgabe 1/2015
Special Issue on Noise Modeling
Inhalt (41 Artikel)
Comprehensive analysis of GR noise in InGaP–GaAs HBT by physics-based simulation and low frequency characterization
Jean-Christophe Nallatamby, Sylvain Laurent, Michel Prigent, Jean-Claude Jacquet, Didier Floriot, Sylvain Delage
1/f noise simulation in MOSFETs under cyclo-stationary conditions using SPICE simulator
Thiago H. Both, Gilson I. Wirth, Dragica Vasileska
Numerical aspects of noise simulation in MOSFETs by a Langevin–Boltzmann solver
Dino Ruić, Christoph Jungemann
A Deterministic approach to noise in a non-equilibrium electron–phonon system based on the Boltzmann equation
Mindaugas Ramonas, Christoph Jungemann
Noise in oscillators: a review of state space decomposition approaches
F. L. Traversa, M. Bonnin, F. Corinto, F. Bonani
Monte Carlo modelling of noise in advanced III–V HEMTs
J. Mateos, H. Rodilla, B. G. Vasallo, T. González
TeraHertz electronic noise in field-effect transistors
C. Palermo, H. Marinchio, P. Shiktorov, E Starikov, V. Gružinskis, A. Mahi, L Varani
Suppressed and enhanced shot noise in one dimensional field-effect transistors
Giuseppe Iannaccone, Alessandro Betti, Gianluca Fiori
Quantum noise from a Bohmian perspective: fundamental understanding and practical computation in electron devices
D. Marian, E. Colomés, Z. Zhan, X. Oriols
All-optical D flip-flop using single quantum-dot semiconductor optical amplifier assisted Mach–Zehnder interferometer
Dilip Kumar Gayen, Tanay Chattopadhyay, Kyriakos E. Zoiros
Tunable Josephson supercurrent through a two level quantum dot superconductor tunnel junction
A. Dhyani, Rajendra Kumar, B. S. Tewari, Ajay
Physical model for electroforming process in valence change resistive random access memory
Pengxiao Sun, Ling Li, Nianduan Lu, Hangbing Lv, Ming Liu, Su Liu
Distributed-memory parallelization of the Wigner Monte Carlo method using spatial domain decomposition
Paul Ellinghaus, Josef Weinbub, Mihail Nedjalkov, Siegfried Selberherr, Ivan Dimov
Finite element based three dimensional Schrödinger solver for nano-scale devices
Samarth Agarwal, Kai Xiu, Mohit Bajaj, Jeffrey B. Johnson, Stephen Furkay, Phil Oldiges, K. V. R. M. Murali
Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale - junction based on quantum well
Aritra Acharyya, Subhashri Chatterjee, Adrija Das, Kumari Alka Singh
The role of measurement time on the universal crossover from to non- noise behavior
Sebastian A. Diaz, Massimiliano Di Ventra
Ultrafast all-optical universal logic gates with graphene and graphene-oxide metal porphyrin composites
Chandresh Yadav, Sukhdev Roy
Microwave characterization of anisotropic graphene by applying the Duality theorem
Davide Mencarelli, Luca Pierantoni, Andrea di Donato, Marco Farina
Fractal antenna for multi-frequency applications using PIN diode
Sumit V. Rakibe, Sonali D. Sahu, S. V. Khobragade
A novel digital implementation of neuron–astrocyte interactions
Soheila Nazari, Karim Faez, Mahmood Amiri, Ehsan Karami
Role of side groups and temperature dependent studies in a molecular device
C. Preferencial Kala, P. Aruna Priya, D. John Thiruvadigal
Modeling of characteristic parameters for nano-scale junctionless double gate MOSFET considering quantum mechanical effect
Manash Chanda, Swapnadip De, Chandan Kumar Sarkar
Structural and electronic properties of zigzag graphene nanoribbon decorated with copper cluster
M. Berahman, M. H. Sheikhi, A. Zarifkar, H. Nadgaran
A full-range dual material gate tunnel field effect transistor drain current model considering both source and drain depletion region band-to-band tunneling
Pratyush Pandey, Rajat Vishnoi, M. Jagadesh Kumar
Textured window with DLAR coating design for an effective minimization of electrical and optical losses in an efficient III–V solar cell
Khomdram Jolson Singh, N. Basanta Singh, Subir Kumar Sarkar
Quantum corrected drift-diffusion model for terahertz IMPATTs based on different semiconductors
Aritra Acharyya, Jayabrata Goswami, Suranjana Banerjee, J. P. Banerjee
Analytic compact model of ballistic and quasi-ballistic transport for cylindrical gate-all-around MOSFET including drain-induced barrier lowering effect
He Cheng, Shigeyasu Uno, Kazuo Nakazato
Transient dynamics in the Anderson–Holstein model with interfacial screening
E. Perfetto, G. Stefanucci
Mapping of performance limiting issues to analyze top and bottom contact organic thin film transistors
Poornima Mittal, Yuvraj Singh Negi, R. K. Singh
Erratum to: Effects of substrate orientation on opto-electronic properties in self-assembled InAs/GaAs quantum dots
Vinay Chimalgi, Neerav Kharche, Shaikh Ahmed