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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 1/2015

01.03.2015

Quantum corrected drift-diffusion model for terahertz IMPATTs based on different semiconductors

verfasst von: Aritra Acharyya, Jayabrata Goswami, Suranjana Banerjee, J. P. Banerjee

Erschienen in: Journal of Computational Electronics | Ausgabe 1/2015

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Abstract

The authors have developed a quantum corrected drift-diffusion model for impact avalanche transit time (IMPATT) devices by coupling the density gradient model with the classical drift-diffusion model. A large-signal simulation technique has been developed by incorporating the quantum potentials in the current density equations for the analysis of double-drift region IMPATT devices based on different semiconductors such as Wurtzite–GaN, InP, type-IIb diamond (C), 4H–SiC and Si deigned to operate at different millimeter-wave (mm-wave) and terahertz (THz) frequencies. It is observed that, the RF power output and DC to RF conversion efficiency of the devices operating at higher mm-wave (\(>\)140 GHz) and THz frequencies reduce due to the incorporation of quantum corrections in the model; but the effect of quantum corrections are negligible for the devices operating at lower mm-wave frequencies (\(\le \)140 GHz).
Vorheriger Artikel Design of a CPW fed simple hexagonal shape UWB antenna with WLAN and WiMAX band rejection characteristics
Nächster Artikel Analytic compact model of ballistic and quasi-ballistic transport for cylindrical gate-all-around MOSFET including drain-induced barrier lowering effect

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Metadaten
Titel
Quantum corrected drift-diffusion model for terahertz IMPATTs based on different semiconductors
verfasst von
Aritra Acharyya
Jayabrata Goswami
Suranjana Banerjee
J. P. Banerjee
Publikationsdatum
01.03.2015
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 1/2015
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-014-0658-9

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