Skip to main content
Fachgebiete
Automobil + Motoren Bauwesen + Immobilien Business IT + Informatik Elektrotechnik + Elektronik Energie + Nachhaltigkeit Finance + Banking Management + Führung Marketing + Vertrieb Maschinenbau + Werkstoffe Versicherung + Risiko
DE
EN
Themenseiten
Organisationspsychologie Projektmanagement Marketing Smart Manufacturing
Bücher
Zeitschriften
Weitere Formate
Podcasts Webinare Technik Webinare Wirtschaft Kongresse Veranstaltungskalender Awards
Jetzt Einzelzugang starten
Zugang für Unternehmen
Referenzkunden
MTZ-Fachkongress

Antriebe und Energiesysteme von morgen


Austausch von Automobil- und Energiewirtschaft

Am 14./15. Mai geht es in Chemnitz um die Mobilitätswende durch Elektro- und Wasserstofffahrzeuge.
Erweiterte Suche
Anmelden
nach oben
Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 1/2015

01.03.2015

Suppressed and enhanced shot noise in one dimensional field-effect transistors

verfasst von: Giuseppe Iannaccone, Alessandro Betti, Gianluca Fiori

Erschienen in: Journal of Computational Electronics | Ausgabe 1/2015

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

Landauer–Büttiker shot noise formula only considers the impact of Pauli exclusion principle on noise, but not the impact of Coulomb repulsion among carriers. A theory recently derived by the authors is able to include also the impact of Coulomb repulsion, and provides a computational methodology to obtain noise properties on a more complete physical basis. We review recent results from the application of this methodology with the use of in-house developed computational electronics tools. We show that in a one-dimensional FET, electrostatic repulsion among charge carriers in the channel can be responsible for strongly suppressed or enhanced shot noise with respect to the Poissonian Noise, or to the noise level provided by Landauer–Büttiker formula. This is very relevant for device and circuit design, since current semiconductor technology evolution has brought nanoscale FETs very close to the limit of one-dimensional FETs.
Vorheriger Artikel TeraHertz electronic noise in field-effect transistors
Nächster Artikel Shot noise suppression due to a magnetic field in disordered conductors

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Jetzt informieren
Literatur
1.
Landauer, R.: Condensed-matter physics: the noise is the signal. Nature 392, 658–659 (1998)CrossRef
2.
González, T., González, C., Mateos, J., Pardo, D., Reggiani, L., Bulashenko, O.M., Rubi’, J.M.: Universality of the 1/3 shot-noise suppression factor in nondegenerate diffusive conductors. Phys. Rev. Lett. 80, 2901–2904 (1998)CrossRef
3.
Sukhorukov, E.V., Loss, D.: Universality of shot noise in multiterminal diffusive conductors. Phys. Rev. Lett. 80, 4959–4962 (1998)CrossRef
4.
Blanter, Y.M., Büttiker, M.: Shot-noise current-current correlations in multiterminal diffusive conductors. Phys. Rev. B 56, 2127–2136 (1997)CrossRef
5.
Steinbach, A.H., Martinis, J.M., Devoret, M.H.: Observation of hot-electron shot noise in a metallic resistor. Phys. Rev. Lett. 76, 3806–3809 (1996)CrossRef
6.
Schoelkopf, R.J., Burke, P.J., Kozhevnikov, A.A., Prober, D.E., Rooks, M.J.: Frequency dependence of shot noise in a diffusive mesoscopic conductor. Phys. Rev. Lett. 78, 3370–3373 (1997)CrossRef
7.
Iannaccone, G.: Analytical and numerical investigation of noise in nanoscale ballistic field effect transistors. J. Comput. Electron. 3, 199–202 (2004)CrossRef
8.
Iannaccone, G., Crupi, F., Neri, B.: Suppressed shot noise in trap-assisted tunneling of metal-oxide-semiconductor capacitors. Appl. Phys. Lett. 77, 2876–2878 (2000)CrossRef
9.
Iannaccone, G., Crupi, F., Neri, B., Lombardo, S.: Theory and experiment of suppressed shot noise in stress-induced leakage currents. IEEE Trans. Electron Dev. 50, 1363–1369 (2003)CrossRef
10.
Carlo, L.D., Williams, J.R., Zhang, Y., McClure, D.T., Marcus, C.M.: Shot noise in graphene. Phys. Rev. Lett. 100, 156801 (2008)CrossRef
11.
Herrmann, L.G., Delattre, T., Morfin, P., Berroir, J.M., Placais, B., Glattli, D.C., Kontos, T.: Shot noise in fabry-perot interferometers based on carbon nanotubes. Phys. Rev. Lett. 99, 156804 (2007)CrossRef
12.
Betti, A., Fiori, G., Iannaccone, G.: Shot noise in quasi one-dimensional FETs. IEDM Technol. Digest 185–188 (2008)
13.
Betti, A., Fiori, G., Iannaccone, G.: Shot noise suppression in quasi one-dimensional field effect transistors. IEEE Trans. Electron Dev. 56, 2137–2143 (2009)CrossRef
14.
Betti, A., Fiori, G., Iannaccone, G.: Statistical theory of shot noise in quasi-1D field effect transistors in the presence of electron–electron interaction. Phys. Rev. B 81, 035329 (2010)CrossRef
15.
Iannaccone, G., Lombardi, G., Macucci, M., Pellegrini, B.: Enhanced shot noise in resonant tunneling: theory end experiment. Phys. Rev. Lett. 80, 1054 (1998)CrossRef
16.
Iannaccone, G., Macucci, M., Pellegrini, B.: Shot noise in resonant-tunneling structures. Phys. Rev. B 55, 4539–4550 (1997)CrossRef
17.
Pedersen, M.B.M.H., van Langen, S.A., Büttiker, M.: Charge fluctuations in quantum point contacts and chaotic cavities in the presence of transport. Phys. Rev. B 57, 1838 (1998)CrossRef
18.
Büttiker, A.P.M., Thomas, H., Prêtre, A.: Dynamic conductance and the scattering matrix of small conductors. Phys. Lett. A 180, 364 (1993)CrossRef
19.
Betti, A., Fiori, G., Iannaccone, G.: Shot noise analysis in quasi one-dimensional field effect transistors. Int. Conf. Noise Fluct. 1129, 581–584 (2009)
20.
Betti, A., Fiori, G., Iannaccone, G.: Enhanced shot noise in carbon nanotube field-effect transistors. Appl. Phys. Lett. 95, 252108 (2009)CrossRef
21.
Betti, A., Fiori, G., Iannaccone, G.: Enhanced shot noise in carbon nanotube FETs due to electron–hole interaction. IWCE Technol. Dig. 1–4 (2010)
22.
Datta, S.: Electronic Transport in Mesoscopic Systems. Cambridge University Press, Cambridge (1995)CrossRef
23.
Landauer, R.: Spatial variation of currents and fields due to localized scatterers in metallic conduction. IBM J. Res. Dev. 1, 223 (1957)CrossRefMathSciNet
24.
Sai, N., Zwolak, M., Vignale, G., Di Ventra, M.: Dynamical corrections to the DFT–LDA electron conductance in nanoscale systems. Phys. Rev. Lett. 94, 186810 (2005)CrossRef
25.
Vignale, G., Di Ventra, M.: Incompleteness of the Landauer formula for electronic transport. Phys. Rev. B 79, 014201 (2009)CrossRef
26.
Büttiker, M.: Scattering theory of current and intensity noise correlations in conductors and wave guides. Phys. Rev. B 46, 12485–12507 (1992)CrossRef
27.
28.
Fiori, G., Iannaccone, G.: Coupled mode space approach for the simulation of realistic carbon nanotube field-effect transistors. IEEE Trans. Nanotechnol. 6, 475 (2007)CrossRef
29.
Guo, J., Datta, S., Lundstrom, M., Anantam, M.P.: Towards multi-scale modeling of carbon nanotube transistors. Int. J. Multiscale Comput. Eng. 2, 257–276 (2004)CrossRef
30.
Fiori, G., Iannaccone, G.: Three-dimensional simulation of one-dimensional transport in silicon nanowire transistors. IEEE Trans. Nanotechnol. 6, 524–529 (2007)CrossRef
31.
Wang, J., Polizzi, E., Lundstrom, M.: A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation. J. Appl. Phys. 96, 2192–2203 (2004)CrossRef
32.
Fiori, G., Iannaccone, G., Klimeck, G.: A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry. IEEE Trans. Electron Dev. 53, 1782–1788 (2006)CrossRef
33.
Park, H.H., Jin, S., Park, Y.J., Min, H.S.: Quantum simulation of noise in silicon nanowire transistors. J. Appl. Phys. 104, 023708 (2008)CrossRef
34.
Gramespacher, T., Büttiker, M.: Local densities, distribution functions, and wave-function correlations for spatially resolved shot noise at nanocontacts. Phys. Rev. B 60, 2375–2390 (1999)CrossRef
35.
Büttiker, M.: Flux-sensitive correlations of mutually incoherent quantum channels. Phys. Rev. Lett. 68, 843–846 (1992)CrossRef
36.
Park, H.H., Jin, S., Park, Y.J., Min, H.S.: Quantum simulation of noise in silicon nanowire transistors with electron–phonon interactions. J. Appl. Phys. 105, 023712 (2009)CrossRef
37.
van der Ziel, A.: Noise in Solid State Device and Circuits, pp. 75–78. Wiley, New York (1986)
38.
Abidi, A.A.: High-frequency noise measurements on FET’s with small dimensions. IEEE Trans. Electron Dev. 33, 1801–1805 (1986)CrossRef
39.
Navid, R., Dutton, R.W.: The physical phenomena responsible for excess noise in short-channel MOS devices. IEDM Technol. Dig. 75–78 (2002)
40.
Han, K., Shin, H., Lee, K.: Analytical drain thermal noise current model valid for deep submicron MOSFETs. IEEE Trans. Electron Dev. 51, 261–269 (2004)CrossRef
41.
Bulashenko, O.M., Rubí, J.M.: Shot-noise suppression by Fermi and Coulomb correlations in ballistic conductors. Phys. Rev. B 64, 045307 (2001)CrossRef
42.
Martin, T., Landauer, R.: Wave-packet approach to noise in multichannel mesoscopic systems. Phys. Rev. B 45, 1742–1755 (1992)CrossRef
43.
Döring, M.R., Hangleiter, A., Klötzer, N.: Electron–hole correlation effects in generation–recombination noise. Phys. Rev. B 45, 1163–1171 (1992)CrossRef
44.
Bardeen, J.: Tunneling from a many-particle point of view. Phys. Rev. Lett. 6, 57–59 (1961)CrossRef
45.
Iannaccone, G., Pellegrini, B.: Unified approach to electron transport in double-barrier structures. Phys. Rev. B 52, 17406–17412 (1995)CrossRef
46.
Reittu, H.J.: Fermi’s golden rule and Bardeen’s tunneling theory. Am. J. Phys. 63, 940–944 (1995)CrossRef
47.
Ahmadi, M.T., Ismail, R., Tan, M.L.P., Arora, V.K.: The ultimate ballistic drift velocity in carbon nanotubes. J. Nanomater. 2008, 769250 (2008)
Metadaten
Titel
Suppressed and enhanced shot noise in one dimensional field-effect transistors
verfasst von
Giuseppe Iannaccone
Alessandro Betti
Gianluca Fiori
Publikationsdatum
01.03.2015
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 1/2015
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-015-0671-7

Weitere Artikel der Ausgabe 1/2015

Journal of Computational Electronics 1/2015 Zur Ausgabe

OriginalPaper

TeraHertz electronic noise in field-effect transistors

OriginalPaper

All-optical D flip-flop using single quantum-dot semiconductor optical amplifier assisted Mach–Zehnder interferometer

OriginalPaper

Transient dynamics in the Anderson–Holstein model with interfacial screening

OriginalPaper

Physical model for electroforming process in valence change resistive random access memory

OriginalPaper

Textured window with DLAR coating design for an effective minimization of electrical and optical losses in an efficient III–V solar cell

OriginalPaper

A novel digital implementation of neuron–astrocyte interactions

Neuer Inhalt

    Bildnachweise