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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 1/2015

01.03.2015

Transient dynamics in the Anderson–Holstein model with interfacial screening

verfasst von: E. Perfetto, G. Stefanucci

Erschienen in: Journal of Computational Electronics | Ausgabe 1/2015

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Abstract

We study the combined effects of electron–phonon coupling and dot-lead repulsion in the transport properties of the Anderson–Holstein model. We employ a recently proposed nonperturbative method to calculate the transient response of the system. By varying the initial conditions for the time propagation the current exhibits transient oscillations of different nature. We are able to disentangle two dynamical processes, namely the local charge rearrangement due to the dot-lead contacting and the establishment of the nonequilbrium many-body state due to the application of the external bias. These processes involve either Franck–Condon excitations or transitions between the resonant level and the Fermi energy of the leads.
Vorheriger Artikel Effect of high-efficiency emitter on noise characteristics of electron amplifiers
Nächster Artikel Mapping of performance limiting issues to analyze top and bottom contact organic thin film transistors

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Fußnoten
1
We remind that for \(U=0\) the model \(\hat{H}\) threated within the wide-band-limit approximation and the model \(\hat{H}_{c}\) return exactly the same results, that, in turn, do not depend on \(a\), see e.g. Refs.  [25‐27].
 
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Metadaten
Titel
Transient dynamics in the Anderson–Holstein model with interfacial screening
verfasst von
E. Perfetto
G. Stefanucci
Publikationsdatum
01.03.2015
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 1/2015
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-015-0662-8

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