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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 1/2015

01.03.2015

Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale \(p\)-\(n\) junction based on \(\hbox {Si/Si}_{0.4}\hbox {Ge}_{0.6}/\hbox {Si}\) quantum well

verfasst von: Aritra Acharyya, Subhashri Chatterjee, Adrija Das, Kumari Alka Singh

Erschienen in: Journal of Computational Electronics | Ausgabe 1/2015

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Abstract

In this paper, the quantum mechanical behavior of a reverse biased nano-scale \(p\)-\(n\) junction based on \(\hbox {Si/Si}_{0.4}\hbox {Ge}_{0.6}/\hbox {Si}\) quantum well has been studied by obtaining the self-consistent solution of coupled Schrödinger and Poisson equations. The carrier confinement within the said quantum well structure has been investigated by analyzing the special variations of electron and hole densities throughout the device structure obtained from the self-consistent solution of coupled Schrödinger and Poisson equations for different widths of the quantum well. The tunnel current across the junction has also been calculated for the heterostructure for different applied reverse bias voltages. Results show that, due to the greater depth of the quantum well in conduction band as compared to that in valance band of \(\hbox {Si/Si}_{0.4}\hbox {Ge}_{0.6}/\hbox {Si}\) heterostructure, the quantum confinement effect is more pronounced for electrons in conduction band as compared to that for holes in valance band. Finally the current-voltage characteristics of the heterostructure under consideration have been investigated for different widths of the quantum well. It is observed that the modulation of tunnel current may be achieved by varying the width of the quantum well. The present study is the groundwork for investigating the optoelectronic properties of nano-scale photodetectors based on \(\hbox {Si/Si}_{1-x}\hbox {Ge}_{x}/\hbox {Si}\) material system capable of detecting longer wavelengths around 1.30 and 1.55 \(\upmu \hbox {m}\).
Vorheriger Artikel Design and finite element modeling of series-shunt configuration based RF MEMS switch for high isolation operation in K–Ka band
Nächster Artikel Numerical evaluation of the ITRS transistor scaling

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Literatur
1.
Shockley, W.: Circuit element utilizing semiconductive material. U.S. Patent 2569347, 1–13 (1951)
2.
Casey, H.C., Cho, A.Y., Barnes, P.A.: Application of molecular-beam epitaxial layers to heterostructure laser. IEEE J. Quantum Electron. 11(7), 467–470 (1975)CrossRef
3.
Kasper, E., Luy, J.F.: Molecular beam epitaxy of silicon based electronic structures. Microelectron. J. 22(3), 5–16 (1991)CrossRef
4.
Luo, G., Zhu, P., Chen, P., Liu, Z., Lin, H., Qian, P.: An ultrahigh vacuum chemical vapor deposition system and its application to growth of \(n\)MOSFET and HBT structures. Vacuum 59(4), 927–931 (2000)CrossRef
5.
Bean, J.C.: Silicon-based semiconductor heterostructures: column IV bandgap engineering. Proc. IEEE 80(4), 571–587 (1992)CrossRef
6.
Ravaioli, U., Kerkhoven, T., Raschke, M., Galick, A.T.: Numerical simulation of electron confinement in contiguous quantum wires. Supperlattices Microstruct. 11(3), 343–345 (1992)CrossRef
7.
Borukhovich, A.S.: Quantum tunneling in multilayers and heterostructures with ferromagnetic semiconductors. Physics-Uspekhi 42(7), 653–667 (1999)CrossRef
8.
Fox, M., Ispasoiu, R.: Quantum wells, superlattices, and band-gap engineering. Mater. Optoelectron. Photonics D.42, 1021–1039 (2004)
9.
Miller, D.A.B.: Optoelectronic applications of quantum wells. Optics Photonics News, 1(2), 7–15 (1990)
10.
Aeberhard, U.R.S.: A Microscopic Theory of Quantum Well Photovoltaics. PhD Dissertation submitted to Swiss Federal Institute of Technology Zurich, 1–217 (2008)
11.
Blatt, J.M.: Practical points concerning the solution of the Schrödinger equation. J. Comput. Phys. 1(3), 382–396 (1967)CrossRefMATH
12.
Luscombe, J.H., Bouchard, A.M., Luban, M.: Electron confinement in quantum nanostructures: self-consistent Poisson–Schrödinger theory. Phys. Rev. B 46(16), 10262–10268 (1992)CrossRef
13.
Wang, L., Asbeck, P.M., Taur, Y.: Self-consistent 1-D Schrödinger–Poisson solver for III-V heterostructures accounting for conduction band non-parabolicity. Solid-State Electron. 54(11), 1257–1262 (2010)CrossRef
14.
Jeng, S.J., Jagannathan, B., Rieh, J.S., Johnson, J., Schonenberg, K.T., Greenberg, D., Stricker, A., Chen, H., Khater, M., Ahlgren, D., Freeman, G., Stein, K., Subbanna, S.: A 210 GHz f SiGe heterojunction bipolar transistor with a non-self-aligned (NSA) structure. IEEE Electron Device Lett. 22, 542–544 (2001)CrossRef
15.
Jagannathan, B., Khater, M., Pagette, F., Rieh, J.S., Angell, D., Chen, H., Florkey, J., Golan, F., Greenberg, D.R., Groves, R., Jeng, S.J., Johnson, J., Mengistu, E., Schonenberg, K.T., Schnabel, C.M., Smith, P., Stricker, A., Ahlgren, D., Freeman, G., Stein, K., Subbanna, S.: Self-aligned SiGe NPN transistors with 285 GHz \(f_{MAX}\) and 207 GHz \(f_{T}\) in a manufacturable technology. IEEE Electron Device Lett. 23, 258–260 (2002)CrossRef
16.
Mizuno, T., Takagi, S., Sugiyama, N., Satake, H., Kurobe, A., Toriumi, A.: Electron and hole mobility enhancement in strained-Si MOSFET’s on SiGe-on-insulator substrates fabricated by SIMOX technology. IEEE Electron Device Lett. 21, 230–232 (2000)CrossRef
17.
Konig, U., Schaffler, F.: \(p\)-Type Ge-channel MODFET’s with high transconductance grown on Si substrates. IEEE Electron Device Lett. 14, 205–207 (1993)CrossRef
18.
Irisawa, T., Tokumitsu, S., Hattori, T., Nakagawa, K., Koh, S., Shiraki, Y.: Ultrahigh room-temperature hole Hall and effective mobility in \(\text{ Si }_{0.3}\text{ Ge }_{0.7}/\text{ Ge }/\text{ Si }_{0.3}\text{ Ge }_{0.7}\) heterostructures. Appl. Phys. Lett. 81(5), 847–849 (2002)CrossRef
19.
Rim, K., Chu, J., Chen, H., Jenkins, K.A., Kanarsky, T., Lee, K., Mocuta, A., Zhu, H., Roy, R., Newbury, J., Ott, J., Petrarca, K., Mooney, P., Lacey, D., Koester, S., Chan, K., Boyd, D., Ieong, M., and Wong, H.S.: Strained-Si for sub-100-nm MOSFETs. VLSI Symp. Tech. Dig., 98–99 (2002)
20.
Suda, Y., Koyama, H.: Electron resonant tunneling with a high peak-to-valley ratio at room temperature in triple barrier diodes. Appl. Phys. Lett. 79, 2273–2275 (2001)CrossRef
21.
Krstelj, Z.M., Liu, C.W., Xiao, X., Sturm, J.C.: Symmetric \(\text{ Si }/\text{ Si }_{1-x}\text{ Ge }_{x}\) electron resonant tunneling diodes with an anomalous temperature behavior. Appl. Phys. Lett. 62, 603–605 (1993)CrossRef
22.
Liu, H.C., Landheer, D., Buchanan, N., Houghton, D.C.: Resonant tunneling in \(\text{ Si }/\text{ Si }_{1-x}\text{ Ge }_{x}\) double-barrier structures. Appl. Phys. Lett. 52, 1809–1811 (1988)CrossRef
23.
Ismail, K., Meyerson, B.S., Rishton, S., Chu, J., Nelson, S., Noccra, J.: High-transconductance \(n\)-type Si/SiGe modulation-doped field-effect transistors. IEEE Electron Device Lett. 13, 229–231 (1992)
24.
Takagi, S., Hoyt, J.L., Welser, J.J., Gibbons, J.F.: Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors. J. Appl. Phys. 80, 1567 (1996)CrossRef
25.
Koester, S.J., Hammond, R., Chu, J.O.: Extremely high transconductance \(\text{ Ge }/\text{ Si }_{0.4}\text{ Ge }_{0.6}\) p-MODFET’s grown by UHV-CVD. IEEE Electron Device Lett. 21(3), 110–112 (2000)CrossRef
26.
Paul, D.J., See, P., Bates, R., Griffin, N., Coonan, B.P., Redmond, G., Crean, G.M., Zozoulenko, I.V., Berggren, K.F., Hollander, B., Mantl, S.: Si/SiGe electron resonant tunneling diodes with graded spacer wells. Appl. Phys. Lett. 78(26), 4184–4186 (2001)CrossRef
27.
Chang, S.J., Nayak, D.K., Shiraki, Y.: 1.54 \({\mu }\) m electroluminescence from erbium-doped SiGe light emitting diodes. J. Appl. Phys. 83, 1426–1428 (1998)CrossRef
28.
Lee, M.H., Chen, K.F., Lai, C.C., Liu, C.W., Pai, W.W., Chen, M.J., Lin, C.F.: The roughness-enhanced light emission from metal-oxide-silicon light-emitting diodes using very high vacuum prebake. Jpn. J. Appl. Phys. Part 2 Lett. 41, L326–328 (2002)CrossRef
29.
Sfina, N., Lazzari, J.L., Cuminal, Y., Christol, P., Said, M.: Simulation of p-i-n heterojunctions built on strain-compensated \(\text{ Si }/\text{ Si }_{0.40}\text{ Ge }_{0.60}/\text{ Si }\) multiple quantum wells for photodetection near 1.55 \(\mu \text{ m }\). Thin Solid Films 517, 388–390 (2008)CrossRef
30.
Pei, Z., Liang, C.S., Lai, L.S., Tseng, Y.T., Hsu, Y.M., Chen, P.S., Lu, S.C., Liu, C.M., Tsai, M.J., Liu, C.W.: High efficient 850 nm and 1310 nm multiple quantum well SiGe/Si heterojunction phototransistors with 1.25 plus GHz bandwidth. In: International Electron Device Meeting (IEDM), pp. 1–4 (2002)
31.
Chand, N.: A long-wavelength infra-red phototransistor. Electron. Lett. 29(20), 1800–1802 (1993)CrossRef
32.
Yang, M., Schaub, J., Rogers, D., Ritter, M., Rim, K., Welse, J., Park, B.: High speed silicon lateral trench detector on SOI substrate. IEDM Tech. Dig., 547–550 (2001)
33.
Hsu, B.C., Chang, S.T., Shie, C.R., Lai, C.C., Chen, P.S., Liu, C.W.: High efficient 820 nm MOS Ge quantum dot photodetectors for short reach integrated optical receivers. In: International Electron Device Meeting (IEDM), pp. 91–94 (2002)
34.
35.
Doudlas, J., Yuan, Y.: Finite difference method for the transient behavior of a semiconductor device. IMA 286, 1–20 (1987)
36.
Christodoulou, N.S.: An algorithm using Runge–Kutta methods of orders 4 and 5 for systems of ODEs. Int. J. Numer. Methods Appl. 2(1), 47–57 (2009)MATHMathSciNet
37.
Stern, F.: Iteration methods for calculating self-consistent fields in semiconductor inversion layers. J. Comput. Phys. 6(1), 56–67 (1970)CrossRefMATH
38.
Acharyya, A., Banerjee, J.P.: Studies on anisotype \(\text{ Si }/\text{ Si }_{1-x}\text{ Ge }_{x}\) heterojunction DDR IMPATTs: efficient millimeter-wave sources at 94 GHz window. IETE J. Res. 59(4), 424–432 (2013)CrossRef
39.
Sastry, S.S.: Introductory Methods of Numerical Analysis, 2nd edn, pp. 125–126. Prentice-Hall, New Delhi (1995)
40.
Ku, J.H., Nemanich, R.J.: Surface electronic structure of clean and hydrogen-chemisorbed \(\text{ Si }_{x}\text{ Ge }_{1-x}\) alloy surfaces. Phys. Rev. B 54(19), 102–110 (1996)CrossRef
41.
Schaffler, F.: In: Levinshtein, M.E., Rumyantsev, S.L., Shur, M.S., (Eds) Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe, pp. 149–188. John Wiley, New York (2001)
42.
Cavassilas, N., Autran, J.L., Aniel, F., Fishman, G.: Energy and temperature dependence of electron effective masses in silicon. J. Appl. Phys. 92(3), 1431–1433 (2002)CrossRef
43.
44.
Sfina, N., Yahyaoui, N., Said, M., Lazzari, J.L.: Modelling of the quantum transport in strained Si/SiGe/Si superlattices based p-i-n Infrared photodetectors for 1.3 - 1.55 \(\mu \text{ m }\) optical communication. Modeling and Numerical Simulation of Material Science 4, 37–52 (2014)CrossRef
45.
Meyerson, B.S.: UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics and device applications. Proc. IEEE 80(10), 1592–1608 (1992)
46.
Kasper, E., Kibbel, H., Herzog, H.J.: 50 GHz SiGe heterobipolar transistors: growth of the complete layer sequence by molecular beam epitaxy. Thin Solid Films 222, 137–140 (1992)CrossRef
47.
Lee, W.S., Liu, T.Y.: The effect of annealing temperature on the microstructure of nanoindented Au/Cr/Si thin films. Nanotechnology 18(33), 335701 (2007)CrossRef
Metadaten
Titel
Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale - junction based on quantum well
verfasst von
Aritra Acharyya
Subhashri Chatterjee
Adrija Das
Kumari Alka Singh
Publikationsdatum
01.03.2015
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 1/2015
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-014-0637-1

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