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IEEE 754 Floating Point Pipelined Multiplier with Karatsuba for Mitigations of Area and Power Read chapter Read first chapter

2021 | OriginalPaper | Chapter

Novel Low-Power Nonvolatile High-K Memristor FET with Programmable SET/RESET for Synaptic Learning

Authors : Debashis Panda, Alaka Pradhan

Published in: Computers and Devices for Communication

Publisher: Springer Singapore

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Abstract

Memristor field-effect transistor based on TiOx layer has been fabricated; 15-nm active switching layer and position of the different gates are confirmed from the scanning electron microscope structure. Forming voltage of  ~7 V is required to initiate the switching process. The set/reset voltages are strongly influenced by the gate voltage. As the gate voltage increases, the set/reset voltages also increase. The effect of gate on switching mechanism is also briefly discussed.

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previous chapter Comparative Study of AlGaN/GaN HEMT and MOS-HEMT Under Positive Gate Bias-Induced Stress
next chapter Numerical Investigation of Gate Field Plate AlGaN/GaN HEMT with Multi-recessed Buffer
Literature
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Panda, D., Simanjuntak, F.M., Tseng, T.-Y.: AIP Adv. 6, 0753141–7 (2016)
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Chandrasekaran, S., Simanjuntak, F., Saminathan, R., Panda, D., Tseng, T.Y.: Nanotechnology 30, 445205 (2019)CrossRef
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Panda, D., Sahu, P.P., Tseng, T.-Y.: Nanoscale Res. Lett. 13(8), 1 (2018)
7.
Chandrasekaran, S., Simanjuntak, F.M., Panda, D., Tseng, T.-Y.: IEEE Trans. Electron Device 66(11), 4722–4726 (2019)
Metadata
Title
Novel Low-Power Nonvolatile High-K Memristor FET with Programmable SET/RESET for Synaptic Learning
Authors
Debashis Panda
Alaka Pradhan
Copyright Year
2021
Publisher
Springer Singapore
Book
Computers and Devices for Communication

Print ISBN: 978-981-15-8365-0

Electronic ISBN: 978-981-15-8366-7

Copyright Year: 2021

DOI
https://doi.org/10.1007/978-981-15-8366-7_75