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IEEE 754 Floating Point Pipelined Multiplier with Karatsuba for Mitigations of Area and Power Read chapter Read first chapter

2021 | OriginalPaper | Chapter

Comparative Study of AlGaN/GaN HEMT and MOS-HEMT Under Positive Gate Bias-Induced Stress

Authors : Amrutamayee Nayak, Vandana Kumari, Mridula Gupta, Manoj Saxena

Published in: Computers and Devices for Communication

Publisher: Springer Singapore

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Abstract

The present work compares the reliability of AlGaN/GaN HEMT and MOS-HEMT using ATLAS TCAD software in terms of positive gate bias-induced stress. The applied positive gate bias stress modulates the 2DEG density in the channel region, thereby resulting in change in off-state current and threshold voltage with marginal change in on-state current. The work presented in this paper also analyzes the influence of barrier thickness, passivation permittivity and oxide permittivity on the parameters such as: Vth (threshold voltage), Ioff current and electron concentration. Maximum variation in Ids (drain current) and Vth has been seen with Al2O3-based AlGaN/GaN MOS-HEMT compared to SiN-based MOS-HEMT. The observed change in device performance with positive gate bias-induced stress has been higher in AlGaN/GaN MOS-HEMT as compared to HEMT. The effect of oxide thickness and operating temperature has also been investigated, and it has been seen that the change in device performance is tremendously high in MOS-HEMT compared to AlGaN/GaN-based HEMT.

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Metadata
Title
Comparative Study of AlGaN/GaN HEMT and MOS-HEMT Under Positive Gate Bias-Induced Stress
Authors
Amrutamayee Nayak
Vandana Kumari
Mridula Gupta
Manoj Saxena
Copyright Year
2021
Publisher
Springer Singapore
Book
Computers and Devices for Communication

Print ISBN: 978-981-15-8365-0

Electronic ISBN: 978-981-15-8366-7

Copyright Year: 2021

DOI
https://doi.org/10.1007/978-981-15-8366-7_74