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2021 | OriginalPaper | Chapter

Numerical Characteristics of Silicon Nitride SiH4/NH3/H2 Plasma Discharge for Thin Film Solar Cell Deposition

Authors : Meryem Grari, CifAllah Zoheir

Published in: Proceedings of the 2nd International Conference on Electronic Engineering and Renewable Energy Systems

Publisher: Springer Singapore

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Abstract

The creation of a uniform deposition requires a thorough study and understanding of the different characteristics of plasma discharge. In this work, we are interested in modeling a radiofrequency (RF) plasma discharge using silicon nitride gases SiH4/NH3/H2. The plasma equations are solved using the numerical finite element method until a periodic steady state is obtained. The numerical results show the fundamental characteristics of RF plasma between the two reactor electrodes. These characteristics allow us to describe the physics of plasma discharge so that physico-chemical processes can be implemented for more efficient and less costly deposition.

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previous chapter Simulation and Optimization of Cds/ZnSnN2 Structure for Solar Cell Applications with SCAPS-1D Software
next chapter A Numerical Study of InGaAs/GaAsP Multiple Quantum Well Solar Cells Using Radial Basis Functions
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Metadata
Title
Numerical Characteristics of Silicon Nitride SiH4/NH3/H2 Plasma Discharge for Thin Film Solar Cell Deposition
Authors
Meryem Grari
CifAllah Zoheir
Copyright Year
2021
Publisher
Springer Singapore
Book
Proceedings of the 2nd International Conference on Electronic Engineering and Renewable Energy Systems

Print ISBN: 978-981-15-6258-7

Electronic ISBN: 978-981-15-6259-4

Copyright Year: 2021

DOI
https://doi.org/10.1007/978-981-15-6259-4_22