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2021 | OriginalPaper | Buchkapitel

Numerical Characteristics of Silicon Nitride SiH4/NH3/H2 Plasma Discharge for Thin Film Solar Cell Deposition

verfasst von : Meryem Grari, CifAllah Zoheir

Erschienen in: Proceedings of the 2nd International Conference on Electronic Engineering and Renewable Energy Systems

Verlag: Springer Singapore

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Abstract

The creation of a uniform deposition requires a thorough study and understanding of the different characteristics of plasma discharge. In this work, we are interested in modeling a radiofrequency (RF) plasma discharge using silicon nitride gases SiH4/NH3/H2. The plasma equations are solved using the numerical finite element method until a periodic steady state is obtained. The numerical results show the fundamental characteristics of RF plasma between the two reactor electrodes. These characteristics allow us to describe the physics of plasma discharge so that physico-chemical processes can be implemented for more efficient and less costly deposition.

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Metadaten
Titel
Numerical Characteristics of Silicon Nitride SiH4/NH3/H2 Plasma Discharge for Thin Film Solar Cell Deposition
verfasst von
Meryem Grari
CifAllah Zoheir
Copyright-Jahr
2021
Verlag
Springer Singapore
DOI
https://doi.org/10.1007/978-981-15-6259-4_22