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Semiconductors
Published in: Semiconductors 8/2016

01-08-2016 | Fabrication, Treatment, and Testing of Materials and Structures

On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

Authors: S. S. Arutyunyan, A. Yu. Pavlov, B. Yu. Pavlov, K. N. Tomosh, Yu. V. Fedorov

Published in: Semiconductors | Issue 8/2016

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previous article On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology
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Metadata
Title
On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs
Authors
S. S. Arutyunyan
A. Yu. Pavlov
B. Yu. Pavlov
K. N. Tomosh
Yu. V. Fedorov
Publication date
01-08-2016
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 8/2016
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782616080078

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