Issue 8/2016
Content (27 Articles)
Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si
K. V. Karabeshkin, P. A. Karaseov, A. I. Titov
Temperature dependence of the hall coefficient in the Вi1–x Sb x System (x = 0.06, 0.12)
B. A. Tairov, X. A. Gasanova, R. I. Selim-zade
Spectra of low-temperature photoluminescence in thin polycrystalline CdTe films
B. Z. Polvonov, N. Kh. Yuldashev
Study of the impurity photoconductivity in p-InSb using epitaxial p + contacts
Sh. O. Eminov
Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma
Kh. A. Abdullin, M. T. Gabdullin, L. V. Gritsenko, D. V. Ismailov, Zh. K. Kalkozova, S. E. Kumekov, Zh. O. Mukash, A. Yu. Sazonov, E. I. Terukov
Conduction in titanium dioxide films and metal–TiO2–Si structures
V. M. Kalygina, I. M. Egorova, I. A. Prudaev, O. P. Tolbanov
Electrical and photoelectric properties of n-TiN/p-Hg3In2Te6 heterostructures
M. N. Solovan, A. I. Mostovyi, V. V. Brus, E. V. Maistruk, P. D. Maryanchuk
Room temperature de Haas–van Alphen effect in silicon nanosandwiches
N. T. Bagraev, V. Yu. Grigoryev, L. E. Klyachkin, A. M. Malyarenko, V. A. Mashkov, V. V. Romanov
Prompt quality monitoring of InSe and GaSe semiconductor crystals by the nuclear quadrupole resonance technique
A. P. Samila, G. I. Lastivka, V. A. Khandozhko, Z. D. Kovalyuk
Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects
I. A. Aleksandrov, V. G. Mansurov, K. S. Zhuravlev
Elastic strains and delocalized optical phonons in AlN/GaN superlattices
D. V. Pankin, M. B. Smirnov, V. Yu. Davydov, A. N. Smirnov, E. E. Zavarin, W. V. Lundin
Nonequilibrium chemical potential in a two-dimensional electron gas in the quantum-Hall-effect regime
D. A. Pokhabov, A. G. Pogosov, M. V. Budantsev, E. Yu. Zhdanov, A. K. Bakarov
Effect of uniaxial deformation on the current–voltage characteristic of a p-Ge/n-GaAs heterostructure
M. M. Gadzhialiev, Z. Sh. Pirmagomedov, T. N. Efendieva
Carrier velocity effect on carbon nanotube Schottky contact
Amir Fathi, M. T. Ahmadi, Razali Ismail
Electromagnetic radiation of electrons in corrugated graphene
S. A. Ktitorov, R. I. Myhamadiarov
Graphene-oxide films printed on rigid and flexible substrates for a wide spectrum of applications
I. V. Antonova, I. A. Kotin, V. I. Popov, F. D. Vasileva, A. N. Kapitonov, S. A. Smagulova
Study of the photoinduced degradation of tandem photovoltaic converters based on a-Si:H/μc-Si:H
A. S. Abramov, D. A. Andronikov, K. V. Emtsev, A. V. Kukin, A. V. Semenov, E. E. Terukova, A. S. Titov, S. A. Yakovlev
Dynamic thermoelectric model of a light-emitting structure with a current spreading layer
V. A. Sergeev, A. M. Hodakov
Comparison of the characteristics of solar cells fabricated from multicrystalline silicon with those fabricated from silicon obtained by the monolike technology
A. A. Betekbaev, B. N. Mukashev, L. Pelissier, P. Lay, G. Fortin, L. Bounaas, D. M. Skakov, D. A. Kalygulov, T. S. Turmagambetov, V. V. Lee
Transition times between the extremum points of the current–voltage characteristic of a resonant tunneling diode with hysteresis
K. S. Grishakov, V. F. Elesin
Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact
A. V. Babichev, H. Zhang, N. Guan, A. Yu. Egorov, F. H. Julien, A. Messanvi, C. Durand, J. Eymery, M. Tchernycheva
Heterojunction low-barrier gaas diodes with an improved reverse I–V characteristic
I. V. Yunusov, V. A. Kagadei, A. Y. Fazleeva, V. S. Arykov
Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation
P. A. Aleksandrov, E. K. Baranova, V. V. Budaragin
On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology
P. G. Serafimovich, M. V. Stepikhova, N. L. Kazanskiy, S. A. Gusev, A. V. Egorov, E. V. Skorokhodov, Z. F. Krasilnik
On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs
S. S. Arutyunyan, A. Yu. Pavlov, B. Yu. Pavlov, K. N. Tomosh, Yu. V. Fedorov
Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies
Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, V. P. Markevich, N. V. Abrosimov, A. S. Kamyshan, A. V. Giro, K. A. Solyanikova
Changes in the conductivity of lead-selenide thin films after plasma etching
S. P. Zimin, I. I. Amirov, V. V. Naumov